MP4T6325 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MP4T6325
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.15 W
Tensión colector-base (Vcb): 8 V
Tensión colector-emisor (Vce): 6 V
Tensión emisor-base (Veb): 1.5 V
Corriente del colector DC máxima (Ic): 0.03 A
Temperatura operativa máxima (Tj): 200 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 11000 MHz
Capacitancia de salida (Cc): 0.42 pF
Ganancia de corriente contínua (hfe): 20
Paquete / Cubierta: SOT-23 SOT-143
Búsqueda de reemplazo de transistor bipolar MP4T6325
MP4T6325 Datasheet (PDF)
mp4t6325.pdf
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mp4t6365.pdf
Low OperatingVoltage, High fTMP4T6365Bipolar Microwave TransistorsV2.00FeaturesCase StylesDesigned for Battery OperationfT to 10 GHzLow Voltage Oscillator and AmplifierLow Phase Noise and Noise FigureHermetic and Surface Mount Packages andChips AvailableCan be Screened to JANTX, JANTXV Equivalent LevelsDescriptionThe MP4T6365 family of low voltage,
mp4t6310.pdf
3 Volt, Low Noise High f Silicon Transistor TMP4T6310 SeriesFeatures SOT-23 High Performance at VCE = 3V Low Noise Figure at Small Currents (0.3-2 mA) High Gain (14 dB) at 1mA Collector Current High fT (14 GHz) Available on Tape and Reel Description The MP4T6310 series of low current, high fT silicon NPN SOT-143 bipolar transistors provides low nois
mp4t645.pdf
Silicon Bipolar High fT Low NoiseMicrowave Transistors MP4T645Case StylesFeaturesfT to 9 GHzLow Noise FigureHigh Associated GainHermetic and Surface Mount Packages AvailableCan be Screened to JANTX, JANTXV Equivalent LevelsIndustry StandardDescriptionSOT-23 SOT-143The MP4T645 family of high gain-bandwidth, smallsignal silicon bipolar transistors is we
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: SRC1202E
History: SRC1202E
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