MP4T802 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

M-Pulse Microwave 8 Volt, NPN Transistor Medium Power MP4T80200 Features Die Outline MP4T80200 High Performance at VCE = 8V 1.0 watts Class C at 900 MHz High fT (6GHz) E m itte r B o n dBase Bond Pa d PadDescription B a lla s tR esistors A ctiv e D eviceThe MP4T80200 series of our medium power high gain npn A reas ( 4)transistor has a power output of 1.0

M-Pulse Microwave 8 Volt, NPN Transistor Medium Power MP4T80100 Features Die Outline MP4T80100 High Performance at VCE = 8V .5 watts Class C at 900 MHz High fT (6GHz) Description The MP4T80100 series of our medium power high gain npn transistor has a power output of .5 watts at 900 MHz when operated in a class C environment. The typical applied voltage is fro

Moderate Power High fTNPN Silicon Transistor MP4T856 SeriesFeatures Package OutlineHigh Output PowerSOT-23- 16 dBm P1dB @ 1 GHz- 10 dBm P1dB @ 2 GHzHigh Gain Bandwidth Product8-9 GHz fTHigh Power Gain- |S21E|2 = 15 dB @ 1 GHz- |S21E|2 = 9 dB @ 2 GHzLow Noise Figure- 1.5 dB @ 1.5 GHzDescriptionSOT-143The MP4T856 series of moderate power NPNtrans