MP4T802 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MP4T802  📄📄 

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 1 W

Tensión colector-base (Vcb): 25 V

Tensión colector-emisor (Vce): 12 V

Tensión emisor-base (Veb): 1.5 V

Corriente del colector DC máxima (Ic): 0.8 A

Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 6000 MHz

Ganancia de corriente contínua (hFE): 20

Encapsulados: DIE

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MP4T802 datasheet

 ..1. Size:135K  m-pulse
mp4t802.pdf pdf_icon

MP4T802

M-Pulse Microwave 8 Volt, NPN Transistor Medium Power MP4T80200 Features Die Outline MP4T80200 High Performance at VCE = 8V 1.0 watts Class C at 900 MHz High fT (6GHz) E m itte r B o n d Base Bond Pa d Pad Description B a lla s t R esistors A ctiv e D evice The MP4T80200 series of our medium power high gain npn A reas ( 4) transistor has a power output of 1.0

 8.1. Size:121K  m-pulse
mp4t801.pdf pdf_icon

MP4T802

M-Pulse Microwave 8 Volt, NPN Transistor Medium Power MP4T80100 Features Die Outline MP4T80100 High Performance at VCE = 8V .5 watts Class C at 900 MHz High fT (6GHz) Description The MP4T80100 series of our medium power high gain npn transistor has a power output of .5 watts at 900 MHz when operated in a class C environment. The typical applied voltage is fro

 9.1. Size:97K  m-pulse
mp4t856.pdf pdf_icon

MP4T802

Moderate Power High f T NPN Silicon Transistor MP4T856 Series Features Package Outline High Output Power SOT-23 - 16 dBm P1dB @ 1 GHz - 10 dBm P1dB @ 2 GHz High Gain Bandwidth Product 8-9 GHz fT High Power Gain - S21E 2 = 15 dB @ 1 GHz - S21E 2 = 9 dB @ 2 GHz Low Noise Figure - 1.5 dB @ 1.5 GHz Description SOT-143 The MP4T856 series of moderate power NPN trans

Otros transistores... MP4514, MP4T243, MP4T3243, MP4T6310, MP4T6325, MP4T6365, MP4T645, MP4T801, C1815, MP4T856, MP6301, MP6901, MPQ3467, MPQ3725, MPQ3725A, MPQ3762, MPQ3798