MPQ3798 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

MPQ3798 MPQ3799 PNP SILICON QUAD TRANSISTOR TO-116 CASE DESCRIPTION: The CENTRAL SEMICONDUCTOR MPQ3798, MPQ3799 types are comprised of four independent Silicon PNP Transistors mounted in a 14 PIN DIP, designed for low level and low noise applications. MAXIMUM RATINGS: (TA=25C) SYMBOL MPQ3798 MPQ3799 UNITS Collector-Base Voltage VCBO 60 60 V Collector-Emitter Voltage VCEO 4

MPQ3798 MPQ3799 PNP SILICON QUAD TRANSISTOR TO-116 CASE DESCRIPTION: The CENTRAL SEMICONDUCTOR MPQ3798, MPQ3799 types are comprised of four independent Silicon PNP Transistors mounted in a 14 PIN DIP, designed for low level and low noise applications. MAXIMUM RATINGS: (TA=25C) SYMBOL MPQ3798 MPQ3799 UNITS Collector-Base Voltage VCBO 60 60 V Collector-Emitter Voltage VCEO 4

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMPQ3725/DQuad Core DriverMMPQ3725Transistor1 16NPN Silicon Motorola Preferred Device2 153 144 135 126 117 108 9161MAXIMUM RATINGSRating Symbol Value Unit CASE 751B05, STYLE 4SO16CollectorEmitter Voltage VCEO 40 VdcCollectorEmitter Voltage VCES 60 VdcEmitterBase Voltage VEB 5.0

TMCentralMPQ3725ASemiconductor Corp.NPN SILICONDESCRIPTION:QUAD TRANSISTORThe CENTRAL SEMICONDUCTOR MPQ3725A type iscomprised of four independant silicon NPN transistorsmounted in a 14-Pin DIP case, designed for core driverapplications.MARKING CODE: FULL PART NUMBERTO-116 CASEMAXIMUM RATINGS: (TA=25C) SYMBOL UNITSCollector-Emitter Voltage VCES 70 VCollector-Emitt

Quad TransistorsTO-116 Case (14 Pin DIP)TC (@ 25oC)=3.0 Watts Total ( 4 Die Equal Power) TYPE NO. DESCRIPTION BVCBO BVCEO BVEBO ICBO @ VCB hFE @ IC VCE (SAT ) @ IC Cob fT NF tOFF COMMENTS PIN Typ CONFIG.**(V) (V) (V) (nA) (V) (mA) (V) (mA) (pF) (MHz) (dB) (ns) MIN MIN MIN MAX MIN MAX MAX MIN MAX MPQ2222 NPN AMPL/SWITCH 60 40 5.0 50 50 30 300 0.40 150 8.0 200 - - - - 4X 2N2222