MPQ6700 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MPQ6700  📄📄 

Material: Si

Polaridad de transistor: NPN*PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.5 W

Tensión colector-base (Vcb): 40 V

Tensión colector-emisor (Vce): 40 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.2 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 200 MHz

Capacitancia de salida (Cc): 4.5 pF

Ganancia de corriente contínua (hFE): 30

Encapsulados: TO116

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MPQ6700 datasheet

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mpq6700.pdf pdf_icon

MPQ6700

MPQ6700 www.centralsemi.com SILICON COMPLEMENTARY DESCRIPTION QUAD TRANSISTOR The CENTRAL SEMICONDUCTOR MPQ6700 is comprised of two 2N3904 (NPN) chips and two 2N3906 (PNP) chips to be used as dual complementary pairs for general purpose amplifier and switching applications. MARKING FULL PART NUMBER TO-116 CASE MAXIMUM RATINGS (TA=25 C) SYMBOL UNITS Collector-Base Voltage V

 0.1. Size:191K  fairchild semi
mmpq6700.pdf pdf_icon

MPQ6700

MMPQ6700 B4 E4 B3 E3 B2 E2 B1 E1 C4 C4 C3 C3 C2 C2 SOIC-16 C1 C1 pin #1 Mark MMPQ6700 TRANSISTOR TYPE C1 B1 E1 & C2 B2 E2 NPN C3 B3 E3 & C4 B4 E4 PNP Quad NPN & PNP General Purpose Amplifier These complementary devices can be used in switches with collector currents of 10 A to 100 mA. These devices are best used when space is the primary consideration. Sourced from

 0.2. Size:142K  onsemi
mmpq6700.pdf pdf_icon

MPQ6700

MMPQ6700 Quad Complementary Pair Transistor PNP/NPN Silicon MAXIMUM RATINGS http //onsemi.com Rating Symbol Value Unit Collector-Emitter Voltage VCEO 40 Vdc Collector-Base Voltage VCB 40 Vdc 16 Emitter-Base Voltage VEB 5.0 Vdc Collector Current IC 200 mAdc 1 Continuous Four CASE 751B-05, STYLE 4 Each Transistors SO-16 Transistor Equal Power Total Power Dissipation PD W

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