BD241CG Todos los transistores

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BD241CG . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BD241CG

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 40 W

Tensión colector-base (Vcb): 115 V

Tensión colector-emisor (Vce): 100 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 3 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 3 MHz

Ganancia de corriente contínua (hfe): 10

Empaquetado / Estuche: TO220

Búsqueda de reemplazo de transistor bipolar BD241CG

BD241CG Datasheet (PDF)

1.1. bd241cg.pdf Size:140K _update

BD241CG
BD241CG

BD241C (NPN), BD242B (PNP), BD242C (PNP) Complementary Silicon Plastic Power Transistors http://onsemi.com Designed for use in general purpose amplifier and switching applications. POWER TRANSISTORS Features COMPLEMENTARY • Collector-Emitter Saturation Voltage - SILICON VCE = 1.2 Vdc (Max) @ IC = 3.0 Adc 3 AMP • Collector-Emitter Sustaining Voltage - 80-100 VOLTS VCEO(sus)

4.1. bd241b_bd241c_bd242b_bd242c.pdf Size:139K _motorola

BD241CG
BD241CG

Order this document MOTOROLA by BD241B/D SEMICONDUCTOR TECHNICAL DATA NPN BD241B Complementary Silicon Plastic BD241C* Power Transistors PNP . . . designed for use in general purpose amplifier and switching applications. BD242B CollectorEmitter Saturation Voltage VCE = 1.2 Vdc (Max) @ IC = 3.0 Adc BD242C* CollectorEmitter Sustaining Voltage VCEO(sus) = 80 Vdc (Min.) BD241

4.2. bd241c_bd242c.pdf Size:108K _motorola

BD241CG
BD241CG

Order this document MOTOROLA by BD241C/D SEMICONDUCTOR TECHNICAL DATA NPN BD241C* Complementary Silicon Plastic PNP BD242B Power Transistors . . . designed for use in general purpose amplifier and switching applications. BD242C* CollectorEmitter Saturation Voltage VCE = 1.2 Vdc (Max) @ IC = 3.0 Adc *Motorola Preferred Device CollectorEmitter Sustaining Voltage VCEO(sus) =

4.3. bd241a_bd241c.pdf Size:256K _st

BD241CG
BD241CG

BD241A BD241C NPN power transistors . Features NPN transistors Applications Audio, general purpose switching and amplifier transistors 3 2 1 Description TO-220 The devices are manufactured in Planar technology with Base Island layout. The resulting transistor shows exceptional high gain Figure 1. Internal schematic diagram performance coupled with very low saturation

4.4. bd241cfp.pdf Size:32K _st

BD241CG
BD241CG

BD241CFP COMPLEMENTARY SILICON POWER TRANSISTOR FULLY MOLDED ISOLATED PACKAGE 2000 V DC ISOLATION (U.L. COMPLIANT) APPLICATIONS GENERAL PURPOSE SWITCHING GENERAL PURPOSE AMPLIFIERS DESCRIPTION The BD241CFP is silicon epitaxial-base NPN 3 transistor mounted in TO-220FP fully molded 2 1 isolated package. It is inteded for power linear and switching TO-220FP applications. INTERNAL

4.5. bd241_bd241a_bd241b_bd241c.pdf Size:27K _fairchild_semi

BD241CG
BD241CG

BD241/A/B/C Medium Power Linear and Switching Applications Complement to BD242/A/B/C respectively TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage : BD241 45 V : BD241A 60 V : BD241B 80 V : BD241C 100 V VCER Collector-Emitter Voltage : BD241

4.6. bd241c_bd242b_bd242c.pdf Size:93K _onsemi

BD241CG
BD241CG

BD241C (NPN), BD242B (PNP), BD242C (PNP) BD241C and BD242C are Preferred Devices Complementary Silicon Plastic Power Transistors http://onsemi.com Designed for use in general purpose amplifier and switching applications. POWER TRANSISTORS Features COMPLEMENTARY Collector-Emitter Saturation Voltage - SILICON VCE = 1.2 Vdc (Max) @ IC = 3.0 Adc 3 AMP Collector-Emitter Sustaining V

4.7. hbd241c.pdf Size:104K _shantou-huashan

BD241CG

NPN SILICON TRANSISTOR Shantou Huashan Electronic Devices Co.,Ltd. HBD241C █ APPLICATIONS Medium Power Linear And Switching Applicatione. █ ABSOLUTE MAXIMUM RATINGS(Ta=25℃) TO-220 Tstg——Storage Temperature………………………… -65~150℃ Tj——Junction Temperature……………………………… 150℃ PC——Collector Dissipation(Tc=25℃)…

Otros transistores... MPQ6700 , MPQ7043 , MPQ7053 , MPQ7093 , BD135TG , BD159G , BD179G , BD180G , 9013 , BD242BG , BD242CG , BD243CG , BD244BG , BD244CG , BD435G , BD436G , BD437G .

 


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