BD241CG . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

BD241C (NPN),BD242B (PNP),BD242C (PNP)Complementary SiliconPlastic Power Transistorshttp://onsemi.comDesigned for use in general purpose amplifier and switchingapplications.POWER TRANSISTORSFeaturesCOMPLEMENTARY Collector-Emitter Saturation Voltage -SILICONVCE = 1.2 Vdc (Max) @ IC = 3.0 Adc3 AMP Collector-Emitter Sustaining Voltage -80-100 VOLTSVCEO(sus)

Order this documentMOTOROLAby BD241B/DSEMICONDUCTOR TECHNICAL DATANPNBD241BComplementary Silicon PlasticBD241C*Power TransistorsPNP. . . designed for use in general purpose amplifier and switching applications.BD242B CollectorEmitter Saturation Voltage VCE = 1.2 Vdc (Max) @ IC = 3.0 AdcBD242C* CollectorEmitter Sustaining Voltage VCEO(sus) = 80 V

Order this documentMOTOROLAby BD241C/DSEMICONDUCTOR TECHNICAL DATANPNBD241C*Complementary Silicon Plastic PNPBD242BPower Transistors. . . designed for use in general purpose amplifier and switching applications.BD242C* CollectorEmitter Saturation Voltage VCE = 1.2 Vdc (Max) @ IC = 3.0 Adc*Motorola Preferred Device CollectorEmitter Sustaining Voltage

BD241ABD241CNPN power transistors.Features NPN transistorsApplications Audio, general purpose switching and amplifier transistors321DescriptionTO-220The devices are manufactured in Planar technology with Base Island layout. The resulting transistor shows exceptional high gain Figure 1. Internal schematic diagramperformance coupled with very low sa

BD241CFPCOMPLEMENTARY SILICON POWER TRANSISTOR FULLY MOLDED ISOLATED PACKAGE 2000 V DC ISOLATION (U.L. COMPLIANT)APPLICATIONS GENERAL PURPOSE SWITCHING GENERAL PURPOSE AMPLIFIERSDESCRIPTIONThe BD241CFP is silicon epitaxial-base NPN3transistor mounted in TO-220FP fully molded 21isolated package.It is inteded for power linear and switchingTO-220FPapplications.INTER

BD241/A/B/CMedium Power Linear and Switching Applications Complement to BD242/A/B/C respectivelyTO-22011.Base 2.Collector 3.EmitterNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCEO Collector-Emitter Voltage: BD241 45 V: BD241A 60 V: BD241B 80 V: BD241C 100 V VCER Collector-Emitter Voltage:

BD241C (NPN),BD242B (PNP),BD242C (PNP)Complementary SiliconPlastic Power Transistorswww.onsemi.comDesigned for use in general purpose amplifier and switchingapplications.POWER TRANSISTORSFeaturesCOMPLEMENTARY High Current Gain - Bandwidth ProductSILICON Compact TO-220 AB Package3 AMP Epoxy Meets UL94 V-0 @ 0.125 in80-100 VOLTS These Devices are Pb-F

NPN SILICON TRANSISTOR Shantou Huashan Electronic Devices Co.,Ltd. HBD241C APPLICATIONS Medium Power Linear And Switching Applicatione. ABSOLUTE MAXIMUM RATINGSTa=25 TO-220 TstgStorage Temperature -65~150TjJunction Temperature 150PCCollector DissipationTc=25

isc Silicon NPN Power Transistor BD241/A/B/CDESCRIPTIONDC Current Gain -h = 25(Min)@ I = 1.0AFE CCollector-Emitter Sustaining Voltage-: V = 45V(Min)- BD241; 60V(Min)- BD241ACEO(SUS)80V(Min)- BD241B; 100V(Min)- BD241CComplement to Type BD242/A/B/CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in gene