BDS10IG . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: BDS10IG
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 90 W
   Tensión colector-base (Vcb): 60 V
   Tensión colector-emisor (Vce): 60 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 15 A
   Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 3 MHz
   Ganancia de corriente contínua (hfe): 40
   Paquete / Cubierta: TO257AA

Búsqueda de reemplazo de transistor bipolar BDS10IG

BDS10IG Datasheet (PDF)

..1. Size:14K semelab
bds10ig.pdf

BDS10IGBDS11IGSEMEBDS12IGLABMECHANICAL DATADimensions in mm(inches)SILICON NPN4.83 (0.190)5.08 (0.200)10.41 (0.410)EPITAXIAL BASE IN10.67 (0.420)0.89 (0.035)1.14 (0.045)TO257 METAL PACKAGE3.56 (0.140)Dia.3.81 (0.150)FEATURES1 2 3 HERMETIC TO257 ISOLATED METALPACKAGES HIGH RELIABILITY MILITARY AND SPACE OPTIONS0.64 (0.025)Dia.0.89 (0

9.1. Size:360K semelab
bds10n1a.pdf

SILICON NPN EPITAXIAL BIPOLAR TRANSISTOR BDS10N1A, BDS10N1B High Voltage Hermetic Ceramic SMD0.5 (TO-276AA) Surface Mount Package Ideally suited for Power Linear, Switching and general Purpose Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise stated) VCBO Collector Base Voltage 60V VCEO Collector Emitte

9.2. Size:41K semelab
bds10smd.pdf

BDS10 BDS10SMD BDS10SMD05BDS11 BDS11SMD BDS11SMD05BDS12 BDS12SMD BDS12SMD05SILICON NPN EPITAXIAL BASE IN TO220 METAL ANDMECHANICAL DATACERAMIC SURFACEDimensions in mm(inches)MOUNT PACKAGES10.6 (0.42)4.6 (0.18)0.8(0.03)FEATURES3.70 Dia. Nom HERMETIC METAL OR CERAMIC PACKAGES HIGH RELIABILITY1 2 3 MILITARY AND SPACE OPTIONS SCREENING TO CECC LEVEL

9.3. Size:360K semelab
bds10n1b.pdf