BDS11SMD05 Todos los transistores

 

BDS11SMD05 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BDS11SMD05
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 43.75 W
   Tensión colector-base (Vcb): 80 V
   Tensión colector-emisor (Vce): 80 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 15 A
   Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 3 MHz
   Ganancia de corriente contínua (hfe): 40
   Paquete / Cubierta: TO276AA

 Búsqueda de reemplazo de transistor bipolar BDS11SMD05

 

BDS11SMD05 Datasheet (PDF)

 ..1. Size:41K  semelab
bds11smd05.pdf

BDS11SMD05 BDS11SMD05

BDS10 BDS10SMD BDS10SMD05BDS11 BDS11SMD BDS11SMD05BDS12 BDS12SMD BDS12SMD05SILICON NPN EPITAXIAL BASE IN TO220 METAL ANDMECHANICAL DATACERAMIC SURFACEDimensions in mm(inches)MOUNT PACKAGES10.6 (0.42)4.6 (0.18)0.8(0.03)FEATURES3.70 Dia. Nom HERMETIC METAL OR CERAMIC PACKAGES HIGH RELIABILITY1 2 3 MILITARY AND SPACE OPTIONS SCREENING TO CECC LEVEL

 6.1. Size:41K  semelab
bds11smd.pdf

BDS11SMD05 BDS11SMD05

BDS10 BDS10SMD BDS10SMD05BDS11 BDS11SMD BDS11SMD05BDS12 BDS12SMD BDS12SMD05SILICON NPN EPITAXIAL BASE IN TO220 METAL ANDMECHANICAL DATACERAMIC SURFACEDimensions in mm(inches)MOUNT PACKAGES10.6 (0.42)4.6 (0.18)0.8(0.03)FEATURES3.70 Dia. Nom HERMETIC METAL OR CERAMIC PACKAGES HIGH RELIABILITY1 2 3 MILITARY AND SPACE OPTIONS SCREENING TO CECC LEVEL

 7.1. Size:16K  semelab
bds11sm.pdf

BDS11SMD05 BDS11SMD05

BDS10 BDS10SMBDS11 BDS11SMSEMEBDS12 BDS12SMLABMECHANICAL DATASILICON NPNDimensions in mmEPITAXIAL BASE IN4.610.60.8 TO220 METAL ANDCERAMIC SURFACE MOUNT3.6Dia.PACKAGES1 2 3FEATURES HERMETIC TO220 METAL OR CERAMICPACKAGES1.0 HIGH RELIABILITY2.54 2. 70 MILITARY AND SPACE OPTIONSBSC BSC SCREENING TO CECC LEVELS 11.52.00.25 FU

 9.1. Size:14K  semelab
bds11ig.pdf

BDS11SMD05 BDS11SMD05

BDS10IGBDS11IGSEMEBDS12IGLABMECHANICAL DATADimensions in mm(inches)SILICON NPN4.83 (0.190)5.08 (0.200)10.41 (0.410)EPITAXIAL BASE IN10.67 (0.420)0.89 (0.035)1.14 (0.045)TO257 METAL PACKAGE3.56 (0.140)Dia.3.81 (0.150)FEATURES1 2 3 HERMETIC TO257 ISOLATED METALPACKAGES HIGH RELIABILITY MILITARY AND SPACE OPTIONS0.64 (0.025)Dia.0.89 (0

Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP42 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

 

 
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