BDS18SMD Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BDS18SMD  📄📄 

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 80 W

Tensión colector-base (Vcb): 120 V

Tensión colector-emisor (Vce): 120 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 8 A

Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 10 MHz

Ganancia de corriente contínua (hFE): 15

Encapsulados: TO276AB

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BDS18SMD datasheet

 ..1. Size:76K  semelab
 bds18smd.pdf pdf_icon

BDS18SMD

BDS18 BDS18SMD BDS18SMD05 BDS19 BDS19SMD BDS19SMD05 SILICON PNP MECHANICAL DATA (Dimensions in mm) EPITAXIAL BASE IN TO220 METAL AND 4.6 10.6 0.8 SMD CERAMIC SURFACE MOUNT PACKAGES 3.6 Dia. FEATURES HERMETIC METAL OR CERAMIC 1 2 3 PACKAGES HIGH RELIABILITY MILITARY AND SPACE OPTIONS 1.0 SCREENING TO CECC LEVELS 2.54 2.70 FULLY ISOLATED (METAL VERSION)

 0.1. Size:76K  semelab
 bds18smd05.pdf pdf_icon

BDS18SMD

BDS18 BDS18SMD BDS18SMD05 BDS19 BDS19SMD BDS19SMD05 SILICON PNP MECHANICAL DATA (Dimensions in mm) EPITAXIAL BASE IN TO220 METAL AND 4.6 10.6 0.8 SMD CERAMIC SURFACE MOUNT PACKAGES 3.6 Dia. FEATURES HERMETIC METAL OR CERAMIC 1 2 3 PACKAGES HIGH RELIABILITY MILITARY AND SPACE OPTIONS 1.0 SCREENING TO CECC LEVELS 2.54 2.70 FULLY ISOLATED (METAL VERSION)

 9.1. Size:211K  inchange semiconductor
 bds18.pdf pdf_icon

BDS18SMD

isc Silicon PNP Power Transistor BDS18 DESCRIPTION Low Collector Saturation Voltage Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Developed for power liner and switching -Gener purpose power . ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -120 V CBO V Collect

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