BDS19SMD Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BDS19SMD 📄📄
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 80 W
Tensión colector-base (Vcb): 150 V
Tensión colector-emisor (Vce): 150 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 8 A
Temperatura operativa máxima (Tj): 200 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 10 MHz
Ganancia de corriente contínua (hFE): 15
Encapsulados: TO276AB
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BDS19SMD datasheet
bds19smd.pdf
BDS18 BDS18SMD BDS18SMD05 BDS19 BDS19SMD BDS19SMD05 SILICON PNP MECHANICAL DATA (Dimensions in mm) EPITAXIAL BASE IN TO220 METAL AND 4.6 10.6 0.8 SMD CERAMIC SURFACE MOUNT PACKAGES 3.6 Dia. FEATURES HERMETIC METAL OR CERAMIC 1 2 3 PACKAGES HIGH RELIABILITY MILITARY AND SPACE OPTIONS 1.0 SCREENING TO CECC LEVELS 2.54 2.70 FULLY ISOLATED (METAL VERSION)
bds19smd05.pdf
BDS18 BDS18SMD BDS18SMD05 BDS19 BDS19SMD BDS19SMD05 SILICON PNP MECHANICAL DATA (Dimensions in mm) EPITAXIAL BASE IN TO220 METAL AND 4.6 10.6 0.8 SMD CERAMIC SURFACE MOUNT PACKAGES 3.6 Dia. FEATURES HERMETIC METAL OR CERAMIC 1 2 3 PACKAGES HIGH RELIABILITY MILITARY AND SPACE OPTIONS 1.0 SCREENING TO CECC LEVELS 2.54 2.70 FULLY ISOLATED (METAL VERSION)
bds19.pdf
isc Silicon PNP Power Transistor BDS19 DESCRIPTION High Voltage V = -150V(Min) CEV Low Saturation Voltage- V = -1.5V(Max)@ I = -4A CE(sat) C High Reliablity Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power linear and switching application and General puepose power. ABSOLUTE MAXIMUM RATINGS(T =25 ) a
Otros transistores... BDS16XSMD05, BDS17SMD, BDS17SMD05, BDS17X, BDS17XSMD, BDS17XSMD05, BDS18SMD, BDS18SMD05, 2N3904, BDS19SMD05, BDS20SMD, BDS21SMD, BDS28AM3A, BDS28AN2, BDS28BM3A, BDS28BN2, BDS28BSMD
History: BDS18SMD05
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