BDS29CN2 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BDS29CN2
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 150 W
Tensión colector-base (Vcb): 120 V
Tensión colector-emisor (Vce): 120 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 30 A
Temperatura operativa máxima (Tj): 200 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 4 MHz
Ganancia de corriente contínua (hfe): 1000
Paquete / Cubierta: TO276AB
Búsqueda de reemplazo de transistor bipolar BDS29CN2
BDS29CN2 Datasheet (PDF)
bds29cn2.pdf
COMPLEMENTARY POWER DARLINGTON BDS28A/B/CN2 BDS29A/B/CN2 High DC Current Gain Hermetic Ceramic Surface Mount Package Screening Options Available Designed for General Purpose Amplifier Applications ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise stated) PNP BDS28A BDS28B BDS28C NPN BDS29A BDS29B BDS29C VCBO Collector Base Voltage 60V 90V 120V
bds29cm3a.pdf
COMPLEMENTARY POWER DARLINGTON BDS28A/B/CM3A BDS29A/B/CM3A High DC Current Gain Hermetic Isolated TO-254AA Package Screening Options Available Designed for General Purpose Amplifier Applications ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise stated) PNP BDS28A BDS28B BDS28C NPN BDS29A BDS29B BDS29C VCBO Collector Base Voltage 60V 90V 120V VC
bds29csmd.pdf
BDS28CSMDDimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed 0.89(0.035)min.Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142)3.41 (0.134) 3.41 (0.134) Max.Package for High Reliability Applications 1 3Bipolar PNP Device. 2VCEO = 120V IC = 30A 9.67 (0.381)All Semelab hermetically sealed products 9.38 (0.369)0.50 (0.020)0.26
bds29bn2.pdf
COMPLEMENTARY POWER DARLINGTON BDS28A/B/CN2 BDS29A/B/CN2 High DC Current Gain Hermetic Ceramic Surface Mount Package Screening Options Available Designed for General Purpose Amplifier Applications ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise stated) PNP BDS28A BDS28B BDS28C NPN BDS29A BDS29B BDS29C VCBO Collector Base Voltage 60V 90V 120V
bds29am3a.pdf
COMPLEMENTARY POWER DARLINGTON BDS28A/B/CM3A BDS29A/B/CM3A High DC Current Gain Hermetic Isolated TO-254AA Package Screening Options Available Designed for General Purpose Amplifier Applications ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise stated) PNP BDS28A BDS28B BDS28C NPN BDS29A BDS29B BDS29C VCBO Collector Base Voltage 60V 90V 120V VC
bds29asmd.pdf
BDS29ASMDDimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 0.89(0.035)min.Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142)3.41 (0.134) 3.41 (0.134) Max.Package for High Reliability Applications 1 3Bipolar NPN Device. 2VCEO = 60V IC = 30A 9.67 (0.381)All Semelab hermetically sealed products 9.38 (0.369)0.50 (0.020)0.26 (
bds29bm3a.pdf
COMPLEMENTARY POWER DARLINGTON BDS28A/B/CM3A BDS29A/B/CM3A High DC Current Gain Hermetic Isolated TO-254AA Package Screening Options Available Designed for General Purpose Amplifier Applications ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise stated) PNP BDS28A BDS28B BDS28C NPN BDS29A BDS29B BDS29C VCBO Collector Base Voltage 60V 90V 120V VC
bds29an2.pdf
COMPLEMENTARY POWER DARLINGTON BDS28A/B/CN2 BDS29A/B/CN2 High DC Current Gain Hermetic Ceramic Surface Mount Package Screening Options Available Designed for General Purpose Amplifier Applications ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise stated) PNP BDS28A BDS28B BDS28C NPN BDS29A BDS29B BDS29C VCBO Collector Base Voltage 60V 90V 120V
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: 2N6414
History: 2N6414
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050