BDX67CECC Datasheet. Equivalente

 ..1. Size:11K  semelab
 bdx67cecc.pdf

BDX67CECC Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 60V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 16A 12.70 (0.50) All Semelab hermetically sealed products can be processed i

 8.1. Size:116K  inchange semiconductor
 bdx67c.pdf

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BDX67C DESCRIPTION With TO-3 package High current capability DARLINGTON APPLICATIONS Designed for power amplification and switching application. PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=25 )

 8.2. Size:213K  inchange semiconductor
 bdx67 bdx67a bdx67b bdx67c.pdf

isc Silicon NPN Darlington Power Transistor BDX67/A/B/C DESCRIPTION High DC Current Gain- h = 1000(Min)@ I = 10A FE C Low Saturation Voltage Complement to Type BDX66/A/B/C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATING

 9.1. Size:139K  comset
 bdx67.pdf

BDX67, A, B, C NPN SILICON DARLINGTONS NPN SILICON DARLINGTONS High current power darlingtons designed for power amplification and switching applications. ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit BDX67 60 BDX67A 80 VCEO Collector-Emitter Voltage V BDX67B 100 BDX67C 120 BDX67 80 BDX67A 100 VCBO Collector-Base Voltage V BDX67B 120 BDX67C 140 BDX67 BDX6

 9.2. Size:24K  semelab
 bdx67-a-b-c.pdf

BDX67 BDX67A BDX67B BDX67C MECHANICAL DATA NPN EPITAXIAL BASE Dimensions in mm DARLINGTON POWER TRANSISTOR 26.6 max. 9.0 max. 4. 2 2. 5 NPN epitaxial base transistors in monolithic Darlington circuit for audio output stages and general B E amplifier and switching applications. PNP complements are 10.9 12.8 BDX66, BDX66A, BDX66B, BDX66C. TO3 Package. Case connected to col

 9.3. Size:116K  inchange semiconductor
 bdx67.pdf

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BDX67 DESCRIPTION With TO-3 package High current capability DARLINGTON APPLICATIONS Designed for power amplification and switching application. PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=25 )

 9.4. Size:150K  inchange semiconductor
 bdx67 a b c.pdf

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor BDX67/A/B/C DESCRIPTION High DC Current Gain- hFE= 1000(Min)@ IC= 10A Low Saturation Voltage Complement to Type BDX66/A/B/C APPLICATIONS Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER

 9.5. Size:116K  inchange semiconductor
 bdx67b.pdf

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BDX67B DESCRIPTION With TO-3 package High current capability DARLINGTON APPLICATIONS Designed for power amplification and switching application. PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=25 )