BDY27CX . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: BDY27CX
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 85 W
   Tensión colector-emisor (Vce): 100 V
   Corriente del colector DC máxima (Ic): 6 A

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 10 MHz
   Ganancia de corriente contínua (hfe): 60
   Paquete / Cubierta: TO204

Búsqueda de reemplazo de transistor bipolar BDY27CX

BDY27CX Datasheet (PDF)

..1. Size:11K semelab
bdy27cx.pdf

BDY27CXDimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar NPN Device. 3VCEO = 100V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 6A 12.70 (0.50) All Semelab hermetically sealed products can be processed in

9.1. Size:258K comset
bdy26-bdy27-bdy28-183t2-184t2-185t2.pdf

COMSETSEMICONDUCTORSBDY26, 183 T2BDY27, 184 T2BDY28, 185 T2NPN SILICON TRANSISTORS, DIFFUSEDMESALF Large Signal Power AmplificationHigh Current Fast SwitchingABSOLUTE MAXIMUM RATINGSSymbol Ratings Value UnitBDY26, 183T2 180VCEO Collector-Emitter Voltage BDY27, 184T2 200 VBDY28, 185T2 250BDY26, 183T2 300VCBO Collector-Base Voltage BDY27, 184T2 400 VBDY28, 185T2 50

9.2. Size:11K semelab
bdy27as.pdf

BDY27ASDimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar NPN Device. 3VCEO = 100V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 6A 12.70 (0.50) All Semelab hermetically sealed products can be processed in

9.3. Size:211K inchange semiconductor
bdy27.pdf

isc Silicon NPN Power Transistor BDY27DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 200V(Min.)(BR)CEOCollector-Emitter Saturation Voltage-: V )= 0.6V(Max)@ I = 2ACE(sat CHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for LF signal powe amplifier applications.ABSOLUTE MAXIMUM RAT

Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: 2N1285

Liste

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BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050