BFU520A Todos los transistores

 

BFU520A . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BFU520A
   Código: HZ*
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.45 W
   Tensión colector-base (Vcb): 24 V
   Tensión colector-emisor (Vce): 12 V
   Tensión emisor-base (Veb): 2 V
   Corriente del colector DC máxima (Ic): 0.03 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 10000 MHz
   Capacitancia de salida (Cc): 0.53 pF
   Ganancia de corriente contínua (hfe): 60
   Paquete / Cubierta: SOT23

 Búsqueda de reemplazo de transistor bipolar BFU520A

 

BFU520A Datasheet (PDF)

 ..1. Size:293K  nxp
bfu520a.pdf

BFU520A
BFU520A

BFU520ANPN wideband silicon RF transistorRev. 1 13 January 2014 Product data sheet1. Product profile1.1 General descriptionNPN silicon RF transistor for high speed, low noise applications in a plastic, 3-pin SOT23 package.The BFU520A is part of the BFU5 family of transistors, suitable for small signal to medium power applications up to 2 GHz.1.2 Features and benefits

 8.1. Size:329K  philips
bfu520.pdf

BFU520A
BFU520A

BFU520NPN wideband silicon RF transistorRev. 2 5 March 2014 Product data sheet1. Product profile1.1 General descriptionNPN silicon RF transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT143B package.The BFU520 is part of the BFU5 family of transistors, suitable for small signal to medium power applications up to 2 GHz.1.2 Features and bene

 8.2. Size:325K  philips
bfu520x.pdf

BFU520A
BFU520A

BFU520XNPN wideband silicon RF transistorRev. 2 5 March 2014 Product data sheet1. Product profile1.1 General descriptionNPN silicon RF transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT143B package.The BFU520X is part of the BFU5 family of transistors, suitable for small signal to medium power applications up to 2 GHz.1.2 Features and be

 8.3. Size:332K  philips
bfu520xr.pdf

BFU520A
BFU520A

BFU520XRNPN wideband silicon RF transistorRev. 1 5 March 2014 Product data sheet1. Product profile1.1 General descriptionNPN silicon RF transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT143R package.The BFU520XR is part of the BFU5 family of transistors, suitable for small signal to medium power applications up to 2 GHz.1.2 Features and

 8.4. Size:304K  nxp
bfu520.pdf

BFU520A
BFU520A

BFU520NPN wideband silicon RF transistorRev. 2 5 March 2014 Product data sheet1. Product profile1.1 General descriptionNPN silicon RF transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT143B package.The BFU520 is part of the BFU5 family of transistors, suitable for small signal to medium power applications up to 2 GHz.1.2 Features and bene

 8.5. Size:296K  nxp
bfu520w.pdf

BFU520A
BFU520A

BFU520WNPN wideband silicon RF transistorRev. 1 13 January 2014 Product data sheet1. Product profile1.1 General descriptionNPN silicon RF transistor for high speed, low noise applications in a plastic, 3-pin SOT323 package.The BFU520W is part of the BFU5 family of transistors, suitable for small signal to medium power applications up to 2 GHz.1.2 Features and benefits

 8.6. Size:320K  nxp
bfu520y.pdf

BFU520A
BFU520A

BFU520YDual NPN wideband silicon RF transistorRev. 1 20 February 2014 Product data sheet1. Product profile1.1 General descriptionDual NPN silicon RF transistor for high speed, low noise applications in a plastic, 6-pin SOT363 package.The BFU520Y is part of the BFU5 family of transistors, suitable for small signal to medium power applications up to 2 GHz.1.2 Features and be

 8.7. Size:308K  nxp
bfu520xr.pdf

BFU520A
BFU520A

BFU520XRNPN wideband silicon RF transistorRev. 1 5 March 2014 Product data sheet1. Product profile1.1 General descriptionNPN silicon RF transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT143R package.The BFU520XR is part of the BFU5 family of transistors, suitable for small signal to medium power applications up to 2 GHz.1.2 Features and

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History: 2SA1492O | MMBT2222L

 

 
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