BFU520Y
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BFU520Y
Código: WB*
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.45
W
Tensión colector-base (Vcb): 24
V
Tensión colector-emisor (Vce): 12
V
Tensión emisor-base (Veb): 2
V
Corriente del colector DC máxima (Ic): 0.005
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 10000
MHz
Capacitancia de salida (Cc): 0.48
pF
Ganancia de corriente contínua (hfe): 60
Paquete / Cubierta:
SOT363
Búsqueda de reemplazo de transistor bipolar BFU520Y
BFU520Y
Datasheet (PDF)
..1. Size:320K nxp
bfu520y.pdf
BFU520YDual NPN wideband silicon RF transistorRev. 1 20 February 2014 Product data sheet1. Product profile1.1 General descriptionDual NPN silicon RF transistor for high speed, low noise applications in a plastic, 6-pin SOT363 package.The BFU520Y is part of the BFU5 family of transistors, suitable for small signal to medium power applications up to 2 GHz.1.2 Features and be
8.1. Size:329K philips
bfu520.pdf
BFU520NPN wideband silicon RF transistorRev. 2 5 March 2014 Product data sheet1. Product profile1.1 General descriptionNPN silicon RF transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT143B package.The BFU520 is part of the BFU5 family of transistors, suitable for small signal to medium power applications up to 2 GHz.1.2 Features and bene
8.2. Size:325K philips
bfu520x.pdf
BFU520XNPN wideband silicon RF transistorRev. 2 5 March 2014 Product data sheet1. Product profile1.1 General descriptionNPN silicon RF transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT143B package.The BFU520X is part of the BFU5 family of transistors, suitable for small signal to medium power applications up to 2 GHz.1.2 Features and be
8.3. Size:332K philips
bfu520xr.pdf
BFU520XRNPN wideband silicon RF transistorRev. 1 5 March 2014 Product data sheet1. Product profile1.1 General descriptionNPN silicon RF transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT143R package.The BFU520XR is part of the BFU5 family of transistors, suitable for small signal to medium power applications up to 2 GHz.1.2 Features and
8.4. Size:304K nxp
bfu520.pdf
BFU520NPN wideband silicon RF transistorRev. 2 5 March 2014 Product data sheet1. Product profile1.1 General descriptionNPN silicon RF transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT143B package.The BFU520 is part of the BFU5 family of transistors, suitable for small signal to medium power applications up to 2 GHz.1.2 Features and bene
8.5. Size:296K nxp
bfu520w.pdf
BFU520WNPN wideband silicon RF transistorRev. 1 13 January 2014 Product data sheet1. Product profile1.1 General descriptionNPN silicon RF transistor for high speed, low noise applications in a plastic, 3-pin SOT323 package.The BFU520W is part of the BFU5 family of transistors, suitable for small signal to medium power applications up to 2 GHz.1.2 Features and benefits
8.6. Size:293K nxp
bfu520a.pdf
BFU520ANPN wideband silicon RF transistorRev. 1 13 January 2014 Product data sheet1. Product profile1.1 General descriptionNPN silicon RF transistor for high speed, low noise applications in a plastic, 3-pin SOT23 package.The BFU520A is part of the BFU5 family of transistors, suitable for small signal to medium power applications up to 2 GHz.1.2 Features and benefits
8.7. Size:308K nxp
bfu520xr.pdf
BFU520XRNPN wideband silicon RF transistorRev. 1 5 March 2014 Product data sheet1. Product profile1.1 General descriptionNPN silicon RF transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT143R package.The BFU520XR is part of the BFU5 family of transistors, suitable for small signal to medium power applications up to 2 GHz.1.2 Features and
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