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BSX63SMD . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BSX63SMD
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 5 W
   Tensión colector-emisor (Vce): 60 V
   Corriente del colector DC máxima (Ic): 3 A

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 30 MHz
   Ganancia de corriente contínua (hfe): 63
   Paquete / Cubierta: TO276AB

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BSX63SMD Datasheet (PDF)

 ..1. Size:10K  semelab
bsx63smd.pdf

BSX63SMD

BSX63SMDDimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 0.89(0.035)min.Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142)3.41 (0.134) 3.41 (0.134) Max.Package for High Reliability Applications 1 3Bipolar NPN Device. 2VCEO = 60V IC = 3A 9.67 (0.381)All Semelab hermetically sealed products 9.38 (0.369)0.50 (0.020)0.26 (0.

 9.1. Size:51K  philips
bsx62 bsx63.pdf

BSX63SMD
BSX63SMD

DISCRETE SEMICONDUCTORSDATA SHEETM3D111BSX62; BSX63NPN switching transistors1997 Jun 19Product specificationSupersedes data of September 1994File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN switching transistors BSX62; BSX63FEATURES PINNING High current (max. 3 A)PIN DESCRIPTION Low voltage (max. 60 V).1 emitter2 base

 9.2. Size:213K  cdil
bsx62 bsx63.pdf

BSX63SMD
BSX63SMD

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON PLANAR TRANSISTOR BSX62, BSX63 TO-39 Metal Can PackageNPN SILICON PLANAR TRANSISTORS IN TO-39 PACKAGE.ABSOLUTE MAXIMUM RATINGS (Ta=25C unless specified otherwise)DESCRIPTION SYMBOL BSX62 BSX63 UNITSVCEOCollector Emitter Voltage 40 60 VVCESCollector Emitter Voltage 60 80 V

Otros transistores... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

History: 2SB670 | 2SA1542

 

 
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History: 2SB670 | 2SA1542

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