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BSX63SMD . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BSX63SMD

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 5 W

Tensión colector-emisor (Vce): 60 V

Corriente del colector DC máxima (Ic): 3 A

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 30 MHz

Ganancia de corriente contínua (hfe): 63

Empaquetado / Estuche: TO276AB

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BSX63SMD Datasheet (PDF)

1.1. bsx63smd.pdf Size:10K _update

BSX63SMD

BSX63SMD Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 0.89 (0.035) min. Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142) 3.41 (0.134) 3.41 (0.134) Max. Package for High Reliability Applications 1 3 Bipolar NPN Device. 2 VCEO = 60V IC = 3A 9.67 (0.381) All Semelab hermetically sealed products 9.38 (0.369) 0.50 (0.020) 0.26 (0.

5.1. bsx62 bsx63.pdf Size:51K _philips

BSX63SMD
BSX63SMD

DISCRETE SEMICONDUCTORS DATA SHEET M3D111 BSX62; BSX63 NPN switching transistors 1997 Jun 19 Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification NPN switching transistors BSX62; BSX63 FEATURES PINNING High current (max. 3 A) PIN DESCRIPTION Low voltage (max. 60 V). 1 emitter 2 base APPLI

5.2. bsx62 bsx63.pdf Size:213K _cdil

BSX63SMD
BSX63SMD

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR TRANSISTOR BSX62, BSX63 TO-39 Metal Can Package NPN SILICON PLANAR TRANSISTORS IN TO-39 PACKAGE. ABSOLUTE MAXIMUM RATINGS (Ta=25?C unless specified otherwise) DESCRIPTION SYMBOL BSX62 BSX63 UNITS VCEO Collector Emitter Voltage 40 60 V VCES Collector Emitter Voltage 60 80 V VE

Otros transistores... 2SC431 , 2SC4310 , 2SC4311 , 2SC4312 , 2SC4313 , 2SC4314 , 2SC4315 , 2SC4316 , BC147 , 2SC4318 , 2SC432 , 2SC4320 , 2SC4321 , 2SC4322 , 2SC4323 , 2SC4324 , 2SC4325 .

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