BSS51A Todos los transistores

 

BSS51A . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BSS51A

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 5 W

Tensión colector-base (Vcb): 80 V

Tensión colector-emisor (Vce): 60 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 1 A

Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hfe): 800

Empaquetado / Estuche: TO39

Búsqueda de reemplazo de transistor bipolar BSS51A

 

BSS51A Datasheet (PDF)

1.1. bss50a bss51a bss52a.pdf Size:62K _comset

BSS51A
BSS51A

NPN BSS50A-51A-52A SILICON PLANAR EPITAXIAL TRANSISTORS SILICON PLANAR EPITAXIAL TRANSISTORS They are NPN transistors mounted in TO-39 metal package. They are designed for use in industrial switching applications e.g. print hammer, solenoid, relay and lamp driving . PNP complements are the BSS60A – 61A – 62A . Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings Val

5.1. pbss5160ds.pdf Size:141K _philips

BSS51A
BSS51A

PBSS5160DS 60 V, 1 A PNP/PNP low VCEsat (BISS) transistor Rev. 03 — 9 October 2008 Product data sheet 1. Product profile 1.1 General description PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor pair in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4160DS. 1.2 Features Low collector-emitter saturation voltage VCEsat High c

5.2. pbss5160u.pdf Size:127K _philips

BSS51A
BSS51A

PBSS5160U 60 V, 1 A PNP low VCEsat (BISS) transistor Rev. 04 — 2 October 2008 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4160U. 1.2 Features Low collector-emitter saturation voltage VCEsat High collector c

 5.3. pbss5140u.pdf Size:270K _philips

BSS51A
BSS51A

 DISCRETE SEMICONDUCTORS DATA SHEET age M3D102 PBSS5140U 40 V low VCEsat PNP transistor Product data sheet 2001 Jul 20 Supersedes data of 2001 Mar 27 NXP Semiconductors Product data sheet 40 V low VCEsat PNP transistor PBSS5140U FEATURES QUICK REFERENCE DATA • Low collector-emitter saturation voltage SYMBOL PARAMETER MAX. UNIT • High current capability VCEO collector-emitte

5.4. pbss5120t.pdf Size:119K _philips

BSS51A
BSS51A

 DISCRETE SEMICONDUCTORS DATA SHEET M3D088 PBSS5120T 20 V, 1 A PNP low VCEsat (BISS) transistor Product data sheet 2003 Sep 29 NXP Semiconductors Product data sheet 20 V, 1 A PBSS5120T PNP low VCEsat (BISS) transistor FEATURES QUICK REFERENCE DATA • Low collector-emitter saturation voltage VCEsat SYMBOL PARAMETER MAX. UNIT • High collector current capability IC and ICM VC

 5.5. pbss5140t 1.pdf Size:55K _philips

BSS51A
BSS51A

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PBSS5140T PNP BISS transistor Product specification 2000 Nov 16 Philips Semiconductors Product specification PNP BISS transistor PBSS5140T FEATURES PINNING • High current (max. 1 A) PIN DESCRIPTION • Low collector-emitter saturation voltage ensures 1 base reduced power consumption. 2 emitter 3 collector APPLICATIONS

5.6. bss50 bss51 bss52 3.pdf Size:52K _philips

BSS51A
BSS51A

DISCRETE SEMICONDUCTORS DATA SHEET M3D111 BSS50; BSS51; BSS52 NPN Darlington transistors 1997 Sep 03 Product specification Supersedes data of 1997 May 13 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification NPN Darlington transistors BSS50; BSS51; BSS52 FEATURES PINNING • High current (max. 1 A) PIN DESCRIPTION • Low voltage (max. 80 V) 1 emi

5.7. pbss5140t.pdf Size:99K _philips

BSS51A
BSS51A

PBSS5140T 40 V, 1 A PNP low VCEsat BISS transistor Rev. 04 — 29 July 2008 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4140T. 1.2 Features Low collector-emitter saturation voltage VCEsat High collector current

5.8. pbss5160t n.pdf Size:284K _philips

BSS51A
BSS51A

PBSS5160T 60 V, 1 A PNP low VCEsat (BISS) transistor Rev. 03 — 18 July 2008 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact details. In data sheets where the previous Philips references remain, please use the new links as sh

5.9. pbss5130t.pdf Size:119K _philips

BSS51A
BSS51A

 DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D088 PBSS5130T 30 V, 1 A PNP low VCEsat (BISS) transistor Product data sheet 2003 Dec 12 NXP Semiconductors Product data sheet 30 V, 1 A PBSS5130T PNP low VCEsat (BISS) transistor FEATURES QUICK REFERENCE DATA • Low collector-emitter saturation voltage VCEsat SYMBOL PARAMETER MAX. UNIT • High collector current capabili

5.10. pbss5140v.pdf Size:249K _philips

BSS51A
BSS51A

 DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PBSS5140V 40 V low VCEsat PNP transistor Product data sheet 2002 Mar 20 Supersedes data of 2001 Oct 19 NXP Semiconductors Product data sheet 40 V low VCEsat PNP transistor PBSS5140V FEATURES QUICK REFERENCE DATA • 300 mW total power dissipation SYMBOL PARAMETER MAX. UNIT • Very small 1.6 mm × 1.2 mm × 0.55 mm ultra thin VCEO coll

5.11. pbss5160pap.pdf Size:268K _nxp

BSS51A
BSS51A

PBSS5160PAP 60 V, 1 A PNP/PNP low VCEsat (BISS) transistor 23 January 2013 Product data sheet 1. General description PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PBSS4160PANP. NPN/NPN complement: PBSS4160PAN. 2. Features and benefits • Very low collecto

5.12. pbss5160qa.pdf Size:256K _nxp

BSS51A
BSS51A

PBSS5160QA 60 V, 1 A PNP low VCEsat (BISS) transistor 23 August 2013 Product data sheet 1. General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. NPN complement: PBSS4160QA. 2. Features and benefits • Very low collector-emitter

5.13. pbss5112pap.pdf Size:246K _nxp

BSS51A
BSS51A

PBSS5112PAP 120 V, 1 A PNP/PNP low VCEsat (BISS) transistor 30 November 2012 Product data sheet 1. Product profile 1.1 General description PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PBSS4112PANP. NPN/NPN complement: PBSS4112PAN. 1.2 Features and benefit

5.14. pbss5160v.pdf Size:136K _nxp

BSS51A
BSS51A

PBSS5160V 60 V, 1 A PNP low VCEsat (BISS) transistor Rev. 03 — 14 December 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough in Small Signals (BISS) transistor in a SOT666 plastic package. NPN complement: PBSS4160V. 1.2 Features Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High efficie

5.15. pbss5160paps.pdf Size:280K _nxp

BSS51A
BSS51A

PBSS5160PAPS 60 V, 1 A PNP/PNP low VCEsat (BISS) transistor 24 November 2014 Product data sheet 1. General description PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. 2. Features and benefits • Very low collector-emitter saturation volt

5.16. pbss5130qa.pdf Size:236K _nxp

BSS51A
BSS51A

PBSS5130QA 30 V, 1 A PNP low VCEsat (BISS) transistor 28 August 2013 Product data sheet 1. General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. NPN complement: PBSS4130QA. 2. Features and benefits • Very low collector-emitter

5.17. pbss5130pap.pdf Size:245K _nxp

BSS51A
BSS51A

PBSS5130PAP 30 V, 1 A PNP/PNP low VCEsat (BISS) transistor 12 December 2012 Product data sheet 1. General description PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PBSS4130PANP. NPN/NPN complement: PBSS4130PAN. 2. Features and benefits • Very low collect

5.18. pbss5140s.pdf Size:360K _blue-rocket-elect

BSS51A
BSS51A

PBSS5140S(BR3CG5140SK) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-92 塑封封装 PNP 半导体三极管。Silicon PNP transistor in a TO-92 Plastic Package. 特征 / Features 集电极耗散功耗大,饱和压降低,大电流开关 High PC, low VCE(sat), high current switching 用途 / Applications 用于中功率静音开关,线性调整器,液晶显示器的

5.19. pbss5160t.pdf Size:1741K _kexin

BSS51A
BSS51A

SMD Type Transistors PNP Transistors PBSS5160T (KBSS5160T) SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 ■ Features ● Low collector-emitter saturation voltage VCEsat ● High collector current capability: IC and ICM 1 2 +0.1 +0.05 0.95 -0.1 ● High efficiency, reduces heat generation 0.1 -0.01 +0.1 1.9 -0.1 ● Reduces printed-circuit board area required 1.Base 2.E

5.20. pbss5160t-hf.pdf Size:1212K _kexin

BSS51A
BSS51A

SMD Type Transistors PNP Transistors PBSS5160T-HF (KBSS5160T-HF) SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 ■ Features ● Low collector-emitter saturation voltage VCEsat ● High collector current capability: IC and ICM 1 2 +0.1 +0.05 0.95 -0.1 ● High efficiency, reduces heat generation 0.1 -0.01 +0.1 1.9 -0.1 ● Reduces printed-circuit board area required ●

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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