2SA1832-GR . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2SA1832-GR
   Código: SG
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 0.1 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.15 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 80 MHz
   Capacitancia de salida (Cc): 7 pF
   Ganancia de corriente contínua (hfe): 120
   Paquete / Cubierta: SOT523

Búsqueda de reemplazo de transistor bipolar 2SA1832-GR

2SA1832-GR Datasheet (PDF)

..1. Size:182K mcc
2sa1832-gr.pdf

MCC2SA1832-YMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMicro Commercial Components2SA1832-GRCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates PNP SiliconRoHS Compliant. See ordering information) Small Package Epitaxial Transistor Mounting:any position Epoxy meets UL 94 V-

6.1. Size:182K mcc
2sa1832-y.pdf

7.1. Size:153K toshiba
2sa1832ft.pdf

2SA1832FT TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1832FT Audio frequency General Purpose Amplifier Applications Unit: mm High voltage: VCEO = -50 V High current: I = -150 mA (max) C High h : h = 120 to 400 FE FE Excellent h linearity FE: h (I = -0.1 mA)/h (I = -2 mA) = 0.95 (typ.) FE C FE C Complementary to 2SC4738F Maximum

7.2. Size:202K toshiba
2sa1832.pdf

2SA1832 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1832 Audio Frequency General Purpose Amplifier Applications Unit: mmHigh voltage and high current: VCEO = -50 V, IC = -150 mA (max) Excellent hFE linearity: hFE (IC = -0.1 mA)/ hFE (IC = -2 mA) = 0.95 (typ.) High hFE: hFE = 70~400 Complementary to 2SC4738 Small package Absolute Maximum

7.3. Size:231K toshiba
2sa1832f.pdf

2SA1832F TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1832F Audio Frequency General Purpose Amplifier Applications Unit: mm High voltage and high current: VCEO = -50 V, IC = -150 mA (max) Excellent h linearity: h (I = -0.1 mA)/h (I = -2 mA) FE FE C FE C = 0.95 (typ.) High hFE: hFE = 120~400 Complementary to 2SC4738F Small package Ma

7.4. Size:202K toshiba
2sa1832o 2sa1832y 2sa1832gr.pdf

7.5. Size:471K secos
2sa1832.pdf

2SA1832 -0.15A , -50V PNP Silicon Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-523FEATURES High Voltage and High Current A Excellent hFE Linearity M Complementary to 2SC4738 33Top View C BCLASSIFICATION OF hFE 11 2L 2Product-Rank 2SA1832-Y 2SA1832-GR KE

7.6. Size:769K wietron
2sa1832.pdf

2SA1832PNP TRANSISTOR3P b Lead(Pb)-Free12FEATURES:* High voltage and high current* Excellent hFE linearitySOT-523(SC-75)* Complementary to 2SC4738 MAXIMUM RATINGS (TA=25 unless otherwise noted) Parameter Symbol Value Units VCBOCollector-Base Voltage -50 V VCEOCollector-Emitter Voltage -50 V VEBOEmitter-Base Voltage -5 V ICCollector Current Continuous

7.7. Size:946K kexin
2sa1832.pdf

SMD Type TransistorsPNP Transistors2SA1832SOT-523 U nit: m m+0.11.6 -0.1+0.11.0 -0.1+0.050.2 -0.05 0.150.052 1 Features High voltage and high current Excellent hFE linearity3 Complementary to 2SC47380.30.05+0.10.5-0.11. Base2. Emitter3. Collecter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector -

Otros transistores... HA9079 , HA9500 , HA9501 , HA9502 , HA9531 , HA9531A , HA9532 , HA9532A , 2222A , HCT2907A , HCT2907M , HDA412 , HDA420 , HDA496 , HEP637 , HEPG0001 , HEPG0002 .

Liste

Recientemente añadidas las descripciónes de los transistores:

BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050