2SA2002 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION http //www.idc-com.co.jp 6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPAN Keep safety in your circuit designs ! Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with

2SA2007 Transistors High-speed Switching Transistor (-60V,-12A) 2SA2007 External dimensions (Units mm) Features 1) High switching speed. 10.0 4.5 (Typ. tf = 0.15 s at Ic = -6A) 3.2 2.8 2) Low saturation voltage. (Typ. VCE(sat) = -0.2V at IC / IB = -6A / -0.3A) 3) Wide SOA. (safe operating area) 1.2 1.3 4) Complements the 2SC5526. 0.8 ( ) (1) Base Gate 0.75 2.54 2.5

2SA2005 Transistors High-voltage Switching (Audio output amplifier transistor, TV velocity modulation transistor) (-160V, -1.5A) 2SA2005 Features External dimensions (Units mm) 1) Flat DC current gain characteristics. 2) High breakdown voltage. (BVCEO = -160V) 10.0 4.5 3) High fT. (Typ. 150MHz) 3.2 2.8 4) Wide SOA (safe operating area). 5) Complements the 2SC5511. 1.2 1.

Power Transistors 2SA2004 Silicon PNP epitaxial planar type Unit mm 4.6 0.2 For power amplification 9.9 0.3 2.9 0.2 3.2 0.1 Features High forward current transfer ratio hFE Satisfactory linearity of forward current transfer ratio hFE Dielectric breakdown voltage of the package > 5 kV High-speed switching 1.4 0.2 2.6 0.1 1.6 0.2 0.8 0.1 0.55 0.15

Transistors 2SA2009 Silicon PNP epitaxial planar type For low-frequency high breakdown voltage amplification Unit mm 0.15+0.10 0.3+0.1 0.05 0.0 Features 3 High collector-emitter voltage (Base open) VCEO Low noise voltage NV S-Mini type package, allowing downsizing and thinning of the equipment and automatic insertion through the tape packing. 1 2 (0.65) (0.

ST 2SA200 PNP Silicon Epitaxial Planar Transistor for general purpose and switching amplifier The transistor is subdivided into two group, O and Y according to its DC current gain. 1. Emitter 2. Collector 3. Base TO-92 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit 60 V Collector Base Voltage -VCBO 50 V Collector Emitter Voltage -VCEO

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA2004 DESCRIPTION Silicon PNP epitaxial planner type 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Driver stage amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Bas