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2SB1203S-E . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SB1203S-E
   Código: B1203
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 1 W
   Tensión colector-base (Vcb): 60 V
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 5 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 130 MHz
   Capacitancia de salida (Cc): 60 pF
   Ganancia de corriente contínua (hfe): 140
   Paquete / Cubierta: TO251

 Búsqueda de reemplazo de transistor bipolar 2SB1203S-E

 

2SB1203S-E Datasheet (PDF)

 ..1. Size:306K  onsemi
2sb1203s-e 2sb1203s-h 2sb1203s 2sb1203s 2sb1203t-e 2sb1203t-h 2sb1203t 2sb1203t.pdf

2SB1203S-E 2SB1203S-E

Ordering number : EN2085C2SB1203/2SD1803Bipolar Transistorhttp://onsemi.com() () ( ) ( )50V, 5A, Low VCE sat , PNP NPN Single TP/TP-FAApplications Relay drivers, high-speed inverters, converters, and other general high-current switching applicationsFeatures Low collector-to-emitter saturation voltage High current and high fT Excellent linearity of hFE

 7.1. Size:111K  sanyo
2sb1203 2sd1803.pdf

2SB1203S-E 2SB1203S-E

Ordering number:ENN2085BPNP/NPN Epitaxial Planar Silicon Transistors2SB1203/2SD1803High-Current Switching ApplicationsApplications Package Dimensions Relay drivers, high-speed inverters, converters, andunit:mmother general high-current switching applications.2045B[2SB1203/2SD1803]6.5Features2.35.00.54 Low collector-to-emitter saturation voltage. High c

 7.2. Size:135K  sanyo
2sb1203.pdf

2SB1203S-E 2SB1203S-E

 7.3. Size:392K  onsemi
2sb1203 2sd1803.pdf

2SB1203S-E 2SB1203S-E

Ordering number : EN2085C2SB1203/2SD1803Bipolar Transistorhttp://onsemi.com() () ( ) ( )50V, 5A, Low VCE sat , PNP NPN Single TP/TP-FAApplications Relay drivers, high-speed inverters, converters, and other general high-current switching applicationsFeatures Low collector-to-emitter saturation voltage High current and high fT Excellent linearity of hFE

 7.4. Size:1272K  kexin
2sb1203.pdf

2SB1203S-E 2SB1203S-E

SMD Type TransistorsPNP Transistors2SB1203TO-252Unit: mm+0.156.50-0.15+0.12.30 -0.1+0.25.30-0.2 +0.8 Features0.50 -0.7 Low collector-to-emitter saturation voltage. High current and high fT Fast switching speed0.127+0.10.80-0.1max Complementary to 2SD1803+ 0.11 Base2.3 0.60- 0.1+0.154.60 -0.152 Collector3 Emitter Absolu

 7.5. Size:300K  lzg
2sb1203 3ca1203.pdf

2SB1203S-E 2SB1203S-E

2SB1203(3CA1203) PNP /SILICON PNP TRANSISTOR Purpose: Relay drivers, high-speed inverters, general high-current switching applications. :f TFeatures: Low V , high current and high f ,

 7.6. Size:253K  inchange semiconductor
2sb1203.pdf

2SB1203S-E 2SB1203S-E

isc Silicon PNP Power Transistor 2SB1203DESCRIPTIONHigh current and high fTLow collector-to-emitter saturation voltageExcellent linearity of hFEFast switching speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSRelay drivers,High speed inverters,converters and othergeneral high-current swi

Otros transistores... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , BC557 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

History: 2DD1766P | 2C2857

 

 
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History: 2DD1766P | 2C2857

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