2SB1205S-TL-E . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SB1205S-TL-E
Código: B1205
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 1 W
Tensión colector-base (Vcb): 25 V
Tensión colector-emisor (Vce): 20 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 320 MHz
Capacitancia de salida (Cc): 60 pF
Ganancia de corriente contínua (hfe): 140
Paquete / Cubierta: TO252
Búsqueda de reemplazo de transistor bipolar 2SB1205S-TL-E
2SB1205S-TL-E Datasheet (PDF)
2sb1205s 2sb1205t.pdf
Ordering number : EN2114C2SB1205Bipolar Transistorhttp://onsemi.com ( )20V, 5A, Low VCE sat , PNP Single TP/TP-FAApplications Flash, voltage regulators, relay drivers, lamp driversFeatures Adoption of FBET, MBIT processes Low saturation voltage Fast switching speed Large current capacity Small and slim package making it easy to make 2SB1205-a
2sb1205.pdf
Ordering number:ENN2114BPNP Epitaxial Planar Silicon Transistor2SB1205Strobe High-Current Switching ApplicationsApplications Package Dimensions Strobe, voltage regulators, relay drivers, lampunit:mmdrivers.2045B[2SB1205]Features 6.52.35.00.5 Adoption of FBET, MBIT processes. 4 Low saturation voltage. Fast switching speed. Large current capacity.
2sb1205.pdf
Ordering number : EN2114C2SB1205Bipolar Transistorhttp://onsemi.com ( )20V, 5A, Low VCE sat , PNP Single TP/TP-FAApplications Flash, voltage regulators, relay drivers, lamp driversFeatures Adoption of FBET, MBIT processes Low saturation voltage Fast switching speed Large current capacity Small and slim package making it easy to make 2SB1205-a
2sb1205.pdf
SMD Type TransistorsPNP Transistors2SB1205TO-252Unit: mm+0.156.50-0.15+0.12.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 Features Low collector-to-emitter saturation voltage. High current and high fT0.127 Fast switching time.+0.10.80-0.1max+ 0.11 Base2.3 0.60- 0.1+0.154.60 -0.152 Collector3 Emitter Absolute Maximum Ratings Ta = 25
2sb1205.pdf
isc Silicon PNP Power Transistor 2SB1205DESCRIPTIONLarge current capacityLow collector-to-emitter saturation voltageFast switching speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSStrobe,voltage regulations,relay drivers,lamp driversABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE
Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
History: 2N834 | 2N677C
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050