2SB1216S-H . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SB1216S-H
Código: B1216
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 1 W
Tensión colector-base (Vcb): 120 V
Tensión colector-emisor (Vce): 100 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 4 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 130 MHz
Capacitancia de salida (Cc): 65 pF
Ganancia de corriente contínua (hfe): 140
Paquete / Cubierta: TO251
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2SB1216S-H Datasheet (PDF)
2sb1216s-e 2sb1216s-h 2sb1216s 2sb1216s 2sb1216t-e 2sb1216t-h 2sb1216t 2sb1216t.pdf
Ordering number : EN2540B2SB1216/2SD1816Bipolar Transistorhttp://onsemi.com() () ( ) ( )100V, 4A, Low VCE sat , PNP NPN Single TP/TP-FAApplications Suitable for relay drivers, high-speed inverters, converters, and other general high-current switching applicationsFeatures Low collector-to-emitter saturation voltage Good linearity of hFE Small and slim pac
2sb1216 2sd1816.pdf
Ordering number:ENN2540APNP/NPN Epitaxial Planar Silicon Transistors2SB1216/2SD1816High-Current Switching ApplicationsApplications Package Dimensions Suitable for relay drivers, high-speed inverters,unit:mmconverters, and other general high-current switching2045Bapplications.[2SB1216/2SD1816]6.52.35.00.54Features Low collector-to-emitter saturation voltag
2sb1216 2sd1816.pdf
2SB1216, 2SD1816 Bipolar Transistor (-)100V, (-)4A, Low VCE(sat), (PNP)NPN Single www.onsemi.com Features Low Collector to Emitter Saturation Voltage Small and Slim Package Facilitating Compactness of Sets ELECTRICAL CONNECTION High fT Good Linearity of hFE 2,4 2,4 Fast Switching Time 1 11: BaseTypical Applications 2 : Collector3: Emitter
2sb1216.pdf
SMD Type TransistorsPNP Transistors2SB1216TO-252Unit: mm+0.156.50-0.15+0.12.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 Features Low collector-to-emitter saturation voltage. High current and high fT0.127 Fast switching time.+0.10.80-0.1max Complementary to 2SD1816+ 0.11 Base2.3 0.60- 0.1+0.154 .60 -0.152 Collector3 Emitter Absol
2sb1216.pdf
isc Silicon PNP Power Transistor 2SB1216DESCRIPTIONExcellent linearity of hFESmall and slim package facilitating compactness of setsLow collector-to-emitter saturation voltageFast switching speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSRelay drivers,High speed inverters,converters and ot
Otros transistores... 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , BD777 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
Liste
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