2SB1216T-E . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Ordering number EN2540B 2SB1216/2SD1816 Bipolar Transistor http //onsemi.com ( ) ( ) ( ) ( ) 100V, 4A, Low VCE sat , PNP NPN Single TP/TP-FA Applications Suitable for relay drivers, high-speed inverters, converters, and other general high-current switching applications Features Low collector-to-emitter saturation voltage Good linearity of hFE Small and slim pac

Ordering number ENN2540A PNP/NPN Epitaxial Planar Silicon Transistors 2SB1216/2SD1816 High-Current Switching Applications Applications Package Dimensions Suitable for relay drivers, high-speed inverters, unit mm converters, and other general high-current switching 2045B applications. [2SB1216/2SD1816] 6.5 2.3 5.0 0.5 4 Features Low collector-to-emitter saturation voltag

2SB1216, 2SD1816 Bipolar Transistor (-)100V, (-)4A, Low VCE(sat), (PNP)NPN Single www.onsemi.com Features Low Collector to Emitter Saturation Voltage Small and Slim Package Facilitating Compactness of Sets ELECTRICAL CONNECTION High fT Good Linearity of hFE 2,4 2,4 Fast Switching Time 1 1 1 Base Typical Applications 2 Collector 3 Emitter

SMD Type Transistors PNP Transistors 2SB1216 TO-252 Unit mm +0.15 6.50-0.15 +0.1 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 Features Low collector-to-emitter saturation voltage. High current and high fT 0.127 Fast switching time. +0.1 0.80-0.1 max Complementary to 2SD1816 + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4 .60 -0.15 2 Collector 3 Emitter Absol

isc Silicon PNP Power Transistor 2SB1216 DESCRIPTION Excellent linearity of h FE Small and slim package facilitating compactness of sets Low collector-to-emitter saturation voltage Fast switching speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Relay drivers,High speed inverters,converters and ot