2SB1302S-TD-E Todos los transistores

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2SB1302S-TD-E . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SB1302S-TD-E

Código: BJ

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 1.3 W

Tensión colector-base (Vcb): 25 V

Tensión colector-emisor (Vce): 20 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 320 MHz

Capacitancia de salida (Cc): 60 pF

Ganancia de corriente contínua (hfe): 140

Empaquetado / Estuche: SOT89

Búsqueda de reemplazo de transistor bipolar 2SB1302S-TD-E

2SB1302S-TD-E Datasheet (PDF)

1.1. 2sb1302s-td-e.pdf Size:152K _update

2SB1302S-TD-E
2SB1302S-TD-E

Ordering number : EN2555C 2SB1302 Bipolar Transisitor http://onsemi.com – – ( ) 20V, 5A, Low VCE sat PNP Single PCP Applicaitons • DC-DC converters, motor drivers, relay drivers, lamp drivers Features • Adoption of FBET, MBIT processes • Low collector to emitter saturation voltage • Large current capacity • Fast switching speed • Ultrasmall size making it easy to

3.1. 2sb1302t-td-e.pdf Size:152K _update

2SB1302S-TD-E
2SB1302S-TD-E

Ordering number : EN2555C 2SB1302 Bipolar Transisitor http://onsemi.com – – ( ) 20V, 5A, Low VCE sat PNP Single PCP Applicaitons • DC-DC converters, motor drivers, relay drivers, lamp drivers Features • Adoption of FBET, MBIT processes • Low collector to emitter saturation voltage • Large current capacity • Fast switching speed • Ultrasmall size making it easy to

3.2. 2sb1302.pdf Size:291K _sanyo

2SB1302S-TD-E
2SB1302S-TD-E

Ordering number : EN2555B 2SB1302 SANYO Semiconductors DATA SHEET PNP Epitaxial Planar Silicon Transistor 2SB1302 High-Current Switching Applications Applications DC-DC converters, motor drivers, relay drivers, lamp drivers. Features Adoption of FBET, MBIT processes. Low collector-to-emitter saturation voltage. Large current capacity. Fast switching speed. Ultrasmall size

3.3. 2sb1302.pdf Size:1181K _kexin

2SB1302S-TD-E
2SB1302S-TD-E

SMD Type Transistors PNP Transistors 2SB1302 1.70 0.1 ■ Features ● Low collector-to-emitter saturation voltage. ● Large current capacity. 0.42 0.1 ● Fast switching speed. 0.46 0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO -25 Collector - Emitter Voltage VCEO -20 V Emitter - Base V

Otros transistores... 2SB1216S-TL-H , 2SB1216T-E , 2SB1216T-H , 2SB1216T-TL-E , 2SB1216T-TL-H , 2SB1260-P , 2SB1260-Q , 2SB1260-R , A1015 , 2SB1302T-TD-E , 2SB1308-P , 2SB1308-Q , 2SB1308-R , 2SB975-220 , 2SBA42 , 2SBA92 , 2SC2001-K .

 


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