2SC3519B-A Todos los transistores

 

2SC3519B-A . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SC3519B-A

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 130 W

Tensión colector-base (Vcb): 180 V

Tensión colector-emisor (Vce): 180 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 15 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 10 MHz

Capacitancia de salida (Cc): 250 pF

Ganancia de corriente contínua (hfe): 50

Empaquetado / Estuche: TO3P

Búsqueda de reemplazo de transistor bipolar 2SC3519B-A

 

2SC3519B-A Datasheet (PDF)

1.1. 2sc3519b-a.pdf Size:217K _update

2SC3519B-A
2SC3519B-A

RoHS 2SC3519B Series RoHS SEMICONDUCTOR Nell High Power Products Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1386B) 15A/160V, 180V/130W 15.6±0.4 4.8±0.2 9.6 2.0±0.1 Φ3.2±0,1 2 TO-3P(B) 3 +0.2 +0.2 0.65 1.05 -0.1 -0.1 FEATURES 5.45±0.1 5.45±0.1 1.4 Recommend for 105W high Fiderity audio frequency B C E amplifier output stage C Complemen

2.1. 2sc3519b.pdf Size:217K _update

2SC3519B-A
2SC3519B-A

RoHS 2SC3519B Series RoHS SEMICONDUCTOR Nell High Power Products Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1386B) 15A/160V, 180V/130W 15.6±0.4 4.8±0.2 9.6 2.0±0.1 Φ3.2±0,1 2 TO-3P(B) 3 +0.2 +0.2 0.65 1.05 -0.1 -0.1 FEATURES 5.45±0.1 5.45±0.1 1.4 Recommend for 105W high Fiderity audio frequency B C E amplifier output stage C Complemen

 3.1. 2sc3519a.pdf Size:138K _mospec

2SC3519B-A
2SC3519B-A

A A A

3.2. 2sc3519.pdf Size:28K _sanken-ele

2SC3519B-A

LAPT 2SC3519/3519A Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1386/A) Application : Audio and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions MT-100(TO3P) Ratings Ratings Symbol Unit Symbol Conditions Unit 2SC3519 2SC3519A 2SC3519 2SC3519A 0.2 4.8 0.4 15.6 VCBO 0.1 160 180 V 100max A 9.6 2.0 ICBO

 3.3. 2sc3519 a.pdf Size:238K _inchange_semiconductor

2SC3519B-A
2SC3519B-A

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors 2SC3519/A DESCRIPTION ·Collector-Emitter Breakdown Voltage- V(BR)CEO= 160V(Min)-2SC3519 = 180V(Min)-2SC3519A ·Good Linearity of hFE ·Complement to Type 2SA1386/A APPLICATIONS ·Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT

Otros transistores... 2SC431 , 2SC4310 , 2SC4311 , 2SC4312 , 2SC4313 , 2SC4314 , 2SC4315 , 2SC4316 , BC147 , 2SC4318 , 2SC432 , 2SC4320 , 2SC4321 , 2SC4322 , 2SC4323 , 2SC4324 , 2SC4325 .

 
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