2SC3631-Z Todos los transistores

 ..1. Size:744K  renesas
 2sc3631-z.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 ..2. Size:235K  nec
 2sc3631-z 2sc3631.pdf

 ..3. Size:189K  inchange semiconductor
 2sc3631-z.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3631-Z DESCRIPTION With TO-252(DPAK) packaging Excellent linearity of h FE Low collector-to-emitter saturation voltage Fast switching speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Relay drivers High-speed inverters Converters High current switching a

 8.1. Size:115K  sanyo
 2sc3638.pdf

Ordering number EN1637C NPN Triple Diffused Planar Silicon Transistor 2SC3638 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High reliability (Adoption of HVP process). unit mm Fast speed. 2022A High breakdown voltage. [2SC3638] Adoption of MBIT process. 1 Base 2 Collector 3 Emitter SANYO TO-3PB Spe

 8.2. Size:117K  sanyo
 2sc3636.pdf

Ordering number EN1614C NPN Triple Diffused Planar Silicon Transistor 2SC3636 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High reliability (Adoption of HVP process). unit mm Fast speed. 2022A High breakdown voltage. [2SC3636] Adoption of MBIT process. 1 Base 2 Collector 3 Emitter SANYO TO-3PB Spe

 8.3. Size:117K  sanyo
 2sc3637.pdf

Ordering number EN1615C NPN Triple Diffused Planar Silicon Transistor 2SC3637 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High reliability (Adoption of HVP process). unit mm Fast speed. 2022A High breakdown voltage. [2SC3637] Adoption of MBIT process. 1 Base 2 Collector 3 Emitter SANYO TO-3PB Spe

 8.4. Size:270K  nec
 2sc3632-z 2sc3632.pdf

 8.5. Size:211K  jmnic
 2sc3638.pdf

JMnic Product Specification Silicon NPN Power Transistors 2SC3638 DESCRIPTION With TO-3PN package High voltage ,high speed High reliability APPLICATIONS Ultrahigh-definition CRT display horizontal deflection output applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Abs

 8.6. Size:213K  jmnic
 2sc3637.pdf

JMnic Product Specification Silicon NPN Power Transistors 2SC3637 DESCRIPTION With TO-3PN package High voltage ,high speed High reliability APPLICATIONS Ultrahigh-definition CRT display horizontal deflection output applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Abs

 8.7. Size:1334K  kexin
 2sc3632-z.pdf

SMD Type Transistors NPN Transistors 2SC3632-Z TO-252 Unit mm +0.15 6.50-0.15 +0.1 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 Features High voltage High speed 0.127 +0.1 0.80-0.1 max Complementary to 2SA1413-Z + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4.60 -0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collec

 8.8. Size:198K  inchange semiconductor
 2sc3638.pdf

isc Silicon NPN Power Transistor 2SC3638 DESCRIPTION High Collector-Emitter Sustaining Voltage- V = 500V(Min) CEO(SUS) High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for ultrahigh-definition CRT display horizontal deflection output applications. ABSOLUTE MAXIMUM RAT

 8.9. Size:198K  inchange semiconductor
 2sc3636.pdf

isc Silicon NPN Power Transistor 2SC3636 DESCRIPTION High Collector-Emitter Sustaining Voltage- V = 500V(Min) CEO(SUS) High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for ultrahigh-definition CRT display horizontal deflection output applications. ABSOLUTE MAXIMUM RAT

 8.10. Size:195K  inchange semiconductor
 2sc3632-z.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3632-Z DESCRIPTION With TO-252(DPAK) packaging High collector-emitter voltage Low collector saturation voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High voltage switching. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Vo

 8.11. Size:204K  inchange semiconductor
 2sc3632.pdf

isc Silicon NPN Power Transistor 2SC3632 DESCRIPTION High Collector-Emitter Voltage Low collector saturation voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High voltage switching. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 600 V CBO V Collector-Em

 8.12. Size:198K  inchange semiconductor
 2sc3637.pdf

isc Silicon NPN Power Transistor 2SC3637 DESCRIPTION High Collector-Emitter Sustaining Voltage- V = 500V(Min) CEO(SUS) High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for ultrahigh-definition CRT display horizontal deflection output applications. ABSOLUTE MAXIMUM RAT