2SC3679B Todos los transistores

 

2SC3679B Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SC3679B

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 100 W

Tensión colector-base (Vcb): 900 V

Tensión colector-emisor (Vce): 800 V

Tensión emisor-base (Veb): 7 V

Corriente del colector DC máxima (Ic): 5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 6 MHz

Capacitancia de salida (Cc): 75 pF

Ganancia de corriente contínua (hFE): 10

Encapsulados: TO3P

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2SC3679B datasheet

 ..1. Size:218K  nell
2sc3679b.pdf pdf_icon

2SC3679B

RoHS 2SC3679B RoHS SEMICONDUCTOR Nell High Power Products Silicon NPN triple diffusion planar transistor (High voltage switching transistor) 5A/800V/100W 15.6 0.4 4.8 0.2 9.6 2.0 0.1 3.2 0,1 TO-3P(B) 2 3 +0.2 +0.2 0.65 1.05 -0.1 -0.1 FEATURES 5.45 0.1 5.45 0.1 1.4 High-speed switching B C E High collector to base voltage VCBO Satisfactory linearity of fow

 7.1. Size:178K  jmnic
2sc3679.pdf pdf_icon

2SC3679B

JMnic Product Specification Silicon NPN Power Transistors 2SC3679 DESCRIPTION With TO-3PN package High voltage switching transistor APPLICATIONS For switching regulator and general purpose applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum ratings (Ta=25 )

 7.2. Size:25K  sanken-ele
2sc3679.pdf pdf_icon

2SC3679B

2SC3679 Silicon NPN Triple Diffused Planar Transistor (High Voltage Switching Transistor) Application Switching Regulator and General Purpose External Dimensions MT-100(TO3P) Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) Symbol 2SC3679 Symbol Conditions 2SC3679 Unit Unit 0.2 4.8 0.4 15.6 0.1 9.6 2.0 VCBO 900 ICBO VCB=800V 100max A V VCEO 80

 7.3. Size:199K  inchange semiconductor
2sc3679.pdf pdf_icon

2SC3679B

isc Silicon NPN Power Transistor 2SC3679 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 800V(Min) (BR)CEO High Switching Speed High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER

Otros transistores... 2SC3647S-TD-E , 2SC3647T-TD-E , 2SC3648S-TD-E , 2SC3648T-TD-E , 2SC3649S-TD-E , 2SC3649S-TD-H , 2SC3649T-TD-E , 2SC3649T-TD-H , S9014 , 2SC3794A , 2SC3852-220FA , 2SC3866-220F , 2SC3906KFRA , 2SC3969-220 , 2SC4081-A , 2SC4081-B , 2SC4081-C .

History: 2SC4097-Q | 3DD167D

 

 

 

 

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