2SC3969-220
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC3969-220
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 20
W
Tensión colector-base (Vcb): 400
V
Tensión colector-emisor (Vce): 400
V
Tensión emisor-base (Veb): 7
V
Corriente del colector DC máxima (Ic): 2
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 10
MHz
Capacitancia de salida (Cc): 30
pF
Ganancia de corriente contínua (hfe): 25
Paquete / Cubierta:
TO220AB
Búsqueda de reemplazo de transistor bipolar 2SC3969-220
2SC3969-220
Datasheet (PDF)
..1. Size:94K inchange semiconductor
2sc3969-220.pdf 
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC3969 DESCRIPTION With TO-220C package Low collector saturation voltage High breakdown voltage Fast switching speed APPLICATIONS For high voltage switching applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2mounting base 3 Emitter Absolute maximum ratings (Tc=25
7.1. Size:120K rohm
2sc3969.pdf
TransistorsHigh Voltage Switching Transistor(400V, 2A)2SC3969 / 2SC5161FFeatures FExternal dimensions (Units: mm)1) Low VCE(sat).VCE(sat) = 0.15V (Typ.)(IC / IB = 1A / 0.2A)2) High breakdown voltage.VCEO = 400V3) Fast switching.tr = 1.0s(IC = 0.8A)FStructureThree-layer, diffused planar typeNPN silicon transistor(96-698-C14)236Transistors 2SC3969 / 2SC5161
7.2. Size:211K inchange semiconductor
2sc3969.pdf
isc Silicon NPN Power Transistor 2SC3969DESCRIPTIONLow Collector Saturation VoltageHigh Collector-Emitter Breakdown Voltage: V = 400V (Min)(BR)CEOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE
8.3. Size:40K panasonic
2sc3965 e.pdf
Transistor2SC3965Silicon NPN triple diffusion planer typeFor small TV video outputUnit: mm5.0 0.2 4.0 0.2FeaturesHigh collector to emitter voltage VCEO.Small collector output capacitance Cob.Allowing supply with the radial taping.0.7 0.1Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings Unit+0.15 +0.15Collector to base voltage VCBO 300 V0.45 0.1 0
8.4. Size:146K jmnic
2sc3962.pdf
JMnic Product SpecificationSilicon NPN Power Transistors 2SC3962 DESCRIPTION With TO-220C package High voltage High speed switching APPLICATIONS For switching regulator and general purpose applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNI
8.5. Size:209K inchange semiconductor
2sc3968.pdf
isc Silicon NPN Power Transistor 2SC3968DESCRIPTIONLow Collector Saturation VoltageHigh Collector-Emitter Breakdown Voltage-: V = 400V (Min)(BR)CEOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALU
8.6. Size:182K inchange semiconductor
2sc3962.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC3962DESCRIPTIONLow Collector Saturation VoltageCollector-Emitter Breakdown Voltage-: V = 400V (Min)(BR)CEOGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in humidifier , DC/DC converter andgeneral purpose applicationsA
Otros transistores... 2SA1803O
, 2SA1803R
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, 2SA1804R
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, 2SA1805O
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.
