2SC4622 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4622DESCRIPTIONHigh Collector-Emitter Sustaining Voltage-: V = 400V(Min)CEO(SUS)High Switching SpeedLow Collector Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsUltrasonic generatorsSolid st

Ordering number:EN3644PNP/NPN Epitaxial Planar Silicon Transistors2SA1777/2SC4623Very High-Definition CRT DisplayVideo Output ApplicationsFeatures Package Dimensions High fT : fT=400MHz (typ).unit:mm High breakdown voltage : VCEO 250V(min).2042B High current.[2SA1777/2SC4623] Small reverse transfer capacitance and excellenthigh-frequnecy characteristic :

2SA1759TransistorsTransistors2SC4505 / 2SC4620(96-97-A324)(96-178-C300)305

Transistor2SC4626Silicon NPN epitaxial planer typeFor high-frequency amplificationUnit: mmComplementary to 2SA17901.6 0.150.4 0.8 0.1 0.4FeaturesOptimum for RF amplification of FM/AM radios.1High transition frequency fT.SS-Mini type package, allowing downsizing of the equipment3and automatic insertion through the tape packing.2Absolute Maximum Ratings (Ta=25

Transistor2SC4627JSilicon NPN epitaxial planer typeFor high-frequency amplificationUnit: mm1.60 0.050.80 0.80 0.050.425 0.425FeaturesOptimum for RF amplification of FM/AM radios.High transition frequency fT.SS-Mini type package, allowing downsizing of the equipmentand automatic insertion through the tape packing. (Flat type)+0.050.850.03Absolute Maximum Rati

Transistor2SC4626Silicon NPN epitaxial planer typeFor high-frequency amplificationUnit: mmComplementary to 2SA17901.6 0.150.4 0.8 0.1 0.4FeaturesOptimum for RF amplification of FM/AM radios.1High transition frequency fT.SS-Mini type package, allowing downsizing of the equipment3and automatic insertion through the tape packing.2Absolute Maximum Ratings (Ta=25

Transistor2SC4627Silicon NPN epitaxial planer typeFor high-frequency amplificationUnit: mm1.6 0.150.4 0.8 0.1 0.4FeaturesOptimum for RF amplification of FM/AM radios.1High transition frequency fT.SS-Mini type package, allowing downsizing of the equipment3and automatic insertion through the tape packing.2Absolute Maximum Ratings (Ta=25C)Parameter Symbol Rati

Transistor2SC4627Silicon NPN epitaxial planer typeFor high-frequency amplificationUnit: mm1.6 0.150.4 0.8 0.1 0.4FeaturesOptimum for RF amplification of FM/AM radios.1High transition frequency fT.SS-Mini type package, allowing downsizing of the equipment3and automatic insertion through the tape packing.2Absolute Maximum Ratings (Ta=25C)Parameter Symbol Rati

2SC4629Silicon NPN EpitaxialApplicationUHF / VHF wide band amplifierOutlineTO-92 (2)1. Base2. Emitter3. Collector3212SC4629Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 15 VCollector to emitter voltage VCEO 9VEmitter to base voltage VEBO 1.5 VCollector current IC 50 mACollector power dissipation PC 600 mWJunc

2SC4628Silicon NPN PlanarApplicationHigh frequency amplifierOutlineTO-92 (2)1. Emitter2. Collector3. Base3212SC4628Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 20 VCollector to emitter voltage VCEO 20 VEmitter to base voltage VEBO 3VCollector current IC 20 mACollector power dissipation PC 200 mWJunction temp