2SC5161 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC5161
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 10 W
Tensión colector-base (Vcb): 400 V
Tensión colector-emisor (Vce): 400 V
Tensión emisor-base (Veb): 7 V
Corriente del colector DC máxima (Ic): 2 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 10 MHz
Capacitancia de salida (Cc): 30 pF
Ganancia de corriente contínua (hFE): 25
Encapsulados: TO252
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2SC5161 datasheet
2sc5161.pdf
2SC5161 Transistors High-Voltage Switching Transistor (400V, 2A) 2SC5161 External dimensions (Units mm) Features 1) Low VCE(sat). VCE(sat) = 0.15V (Typ.) 2.3+0.2 6.5 0.2 -0.1 C0.5 (Ic / IB =1A / 0.2A) 5.1+0.2 0.5 0.1 -0.1 2) High breakdown voltage. BVCEO = 400V 3) Fast switching. 0.65 0.1 0.75 tf 1.0 s (Ic = 0.8A) 0.9 0.5 0.1 2.3 0.2 2.3 0.2 1.0 0.2 S
2sc5161.pdf
SMD Type Transistors SMD Type Transistors SMD Type Transistors SMD Type Transistors SMD Type Transistors SMD Type Transistors SMD Type Transistors Product specification 2SC5161 TO-252 Unit mm +0.15 +0.1 6.50-0.15 2.30-0.1 +0.2 +0.8 Features 5.30-0.2 0.50-0.7 Low VCE(sat). VCE(sat) = 0.15V (Typ.),IC / IB =1A/ 0.2A High breakdown voltage.VCEO =400V 0.127 +0.1 max 0.80-0.1 F
2sc500 2sc501 2sc502 2sc503 2sc504 2sc505 2sc506 2sc507 2sc508 2sc509 2sc510 2sc511.pdf
2sc5171.pdf
2SC5171 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5171 Power Amplifier Applications Unit mm Driver Stage Amplifier Applications High transition frequency fT = 200 MHz (typ.) Complementary to 2SA1930 Maximum Ratings (Tc = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 180 V Collector-emitter voltage VCEO 180 V Emitter-base voltage VEBO
2sc5108ft.pdf
2SC5108FT TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5108FT For VCO Application Unit mm Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO 3 V Base current IB 15 mA Collector current IC 30 mA Collector power dissipation PC 100 mW Junction tempera
2sc5109.pdf
2SC5109 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5109 For VCO Application Unit mm Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO 3 V Base current IB 30 mA Collector current IC 60 mA Collector power dissipation PC 150 mW Junction temperature
2sc5198.pdf
2SC5198 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5198 Power Amplifier Applications Unit mm High breakdown voltage VCEO = 140 V (min) Complementary to 2SA1941 Suitable for use in 70-W high fidelity audio amplifier s output stage Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 140 V Collector-em
2sc5198r 2sc5198o.pdf
2SC5198 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5198 Power Amplifier Applications Unit mm High breakdown voltage VCEO = 140 V (min) Complementary to 2SA1941 Suitable for use in 70-W high fidelity audio amplifier s output stage Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 140 V Collector-em
2sc5111ft.pdf
2SC5111FT TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5111FT For VCO Application Unit mm Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO 3 V Base current IB 30 mA Collector current IC 60 mA Collector power dissipation PC 100 mW Junction tempera
2sc5111.pdf
2SC5111 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5111 For VCO Application Unit mm Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO 3 V Base current IB 30 mA Collector current IC 60 mA Collector power dissipation PC 100 mW Junction temperature
2sc5110.pdf
2SC5110 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5110 For VCO Application Unit mm Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO 3 V Base current IB 30 mA Collector current IC 60 mA Collector power dissipation PC 100 mW Junction temperature
2sc5108.pdf
2SC5108 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5108 For VCO Application Unit mm Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO 3 V Base current IB 15 mA Collector current IC 30 mA Collector power dissipation PC 100 mW Junction temperature
2sc5107.pdf
2SC5107 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5107 For VCO Application Unit mm Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO 3 V Base current IB 15 mA Collector current IC 30 mA Collector power dissipation PC 100 mW Junction temperature
2sc5106.pdf
2SC5106 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5106 For VCO Application Unit mm Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO 3 V Base current IB 15 mA Collector current IC 30 mA Collector power dissipation PC 150 mW Junction temperature
2sc5155.pdf
Ordering number EN4802 NPN Epitaxial Planar Silicon Transistor 2SC5155 Low-Frequency General-Purpose Amplifier, Applications Applications Package Dimensions Various drivers. unit mm 2045B Features [2SC5155] 6.5 High current capacity. 2.3 5.0 0.5 4 Adoption of MBIT process. High DC current gain. Low collector-to-emitter saturation voltage. High VEBO. 0.8
2sc5184.pdf
DATA SHEET SILICON TRANSISTOR 2SC5184 NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES PACKAGE DIMENSIONS Low Noise (Units mm) NF = 1.3 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz 2.1 0.1 Super Mini-Mold package 1.25 0.1 EIAJ SC-70 ORDERING INFORMAT
2sc5186.pdf
DATA SHEET NPN SILICON RF TRANSISTOR 2SC5186 NPN EPITAXIAL SILICON RF TRANSISTOR FOR LOW-NOISE MICROWAVE AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD FEATURES Low noise NF = 1.3 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz 3-pin ultra super minimold package ORDERING INFORMATION Part Number Quantity Supplying Form 2SC5186 50 pcs (N
2sc5177.pdf
DATA SHEET SILICON TRANSISTOR 2SC5177 NPN EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES Low Current Consumption and High Gain PACKAGE DIMENSIONS S21e 2 = 9.0 dB TYP. @ VCE = 2 V, IC = 7 mA, f = 2 GHz (Units mm) S21e 2 = 8.5 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz 2.8 0.2 Mini-Mold package 1.5 0.65+0.1 0.15 EIAJ
2sc5179.pdf
DATA SHEET SILICON TRANSISTOR 2SC5179 NPN EPITAXIAL SILICON TRANSISTOR IN SMALL MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES Low current consumption and high gain PACKAGE DIMENSIONS S21e 2 = 9 dB TYP. @ VCE = 2 V, IC = 7 mA, f = 2 GHz (Units mm) S21e 2 = 8.5 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz 2.1 0.1 Small Mini-Mold package 1.25 0.1 EIAJ SC-
2sc5194.pdf
DATA SHEET SILICON TRANSISTOR 2SC5194 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR FEATURES PACKAGE DRAWINGS Low Voltage Operation, Low Phase Distortion (Unit mm) Low Noise 2.1 0.2 NF = 1.5 dB TYP. @VCE = 3 V, IC = 7 mA, f = 2 GHz 1.25 0.1 NF = 1.7 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz Large Absolute Maximum Collector Current IC = 100 mA 4-P
2sc5183.pdf
DATA SHEET SILICON TRANSISTOR 2SC5183 NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES Low Noise PACKAGE DIMENSIONS (Units mm) NF = 1.3 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz 2.8+0.2 0.3 4-pin Mini-Mold package 1.5+0.2 0.1 EIAJ SC-61 ORDERING
2sc5195.pdf
DATA SHEET SILICON TRANSISTOR 2SC5195 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR FEATURES PACKAGE DRAWINGS Low Voltage Operation, Low Phase Distortion (Unit mm) Low Noise 1.6 0.1 NF = 1.5 dB TYP. @VCE = 3 V, IC = 7 mA, f = 2 GHz 0.8 0.1 NF = 1.5 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz 2 Large Absolute Maximum Collector Current IC = 100 mA S
2sc5185.pdf
DATA SHEET SILICON TRANSISTOR 2SC5185 NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES PACKAGE DIMENSIONS Low Noise (Units mm) NF = 1.3 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz 2.1 0.2 Super Mini-Mold package 1.25 0.1 ORDERING INFORMATION PART QUANTITY ARRA
2sc5181.pdf
DATA SHEET SILICON TRANSISTOR 2SC5181 NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES Low current consumption and high gain PACKAGE DIMENSIONS S21e 2 = 10.5 dBTYP. @ VCE = 2 V, IC = 7 mA, f = 2 GHz (Units mm) S21e 2 = 9.0 dBTYP. @VCE = 1 V, IC = 5 mA, f = 2 GHz 1.6 0.1 Ultra Super Mini-Mold package 0.8
2sc5192.pdf
DATA SHEET SILICON TRANSISTOR 2SC5192 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD FEATURES PACKAGE DRAWINGS Low Voltage Operation, Low Phase Distortion (Unit mm) Low Noise NF = 1.5 dB TYP. @VCE = 3 V, IC = 7 mA, f = 2 GHz +0.2 2.8 0.3 +0.2 NF = 1.7 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz 1.5 0.1 Large Absolute Maximum Collect
2sc5178.pdf
DATA SHEET SILICON TRANSISTOR 2SC5178 NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES Low current consumption and high gain PACKAGE DIMENSIONS S21e 2 = 11.5 dB TYP. @ VCE = 2 V, IC = 7 mA, f = 2 GHz (Units mm) S21e 2 = 10.5 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz 2.8 +0.2 0.3 4-pin Mini-Mold package 1.5 +
2sc5191.pdf
DATA SHEET NPN SILICON RF TRANSISTOR 2SC5191 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN MINIMOLD FEATURES Low Voltage Operation, Low Phase Distortion Low Noise NF = 1.5 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 2 GHz NF = 1.7 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz Large Absolute Maximum Collector Current IC = 100 mA
2sc5180.pdf
DATA SHEET SILICON TRANSISTOR 2SC5180 NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES PACKAGE DIMENSIONS Low current consumption and high gain (Units mm) S21e 2 = 12 dB TYP. @ VCE = 2 V, IC = 7 mA, f = 2 GHz S21e 2 = 11 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz 2.1 0.2 Supper Mini-Mold package 1.
2sc5182.pdf
DATA SHEET SILICON TRANSISTOR 2SC5182 NPS EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES PACKAGE DIMENSIONS Low noise (Units mm) NF = 1.3 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz 2.8 0.2 Mini-Mold package +0.1 1.5 0.65 0.15 EIAJ SC-59 ORDERING INFORMATIO
2sc5193.pdf
DATA SHEET DATA SHEET SILICON TRANSISTOR 2SC5193 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR COMPACT MINI MOLD FEATURES PACKAGE DRAWING (Units mm) Low Voltage Operation, Low Phase Distortion Low Noise 2.1 0.1 NF = 1.5 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 2 GHz 1.25 0.1 NF = 1.7 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz Large Absolute Maximum Coll
2sc5103.pdf
2SC5103 Transistors High speed switching transistor (60V, 5A) 2SC5103 External dimensions (Units mm) Features 1) Low VCE(sat) (Typ. 0.15V at IC / IB = 3 / 0.15A) 2) High speed switching (tf Typ. 0.1 s at IC = 3A) 5.5 1.5 3) Wide SOA. (safe operating area) 0.9 4) Complements the 2SA1952. C0.5 0.8Min. (1) Base(Gate) 1.5 2.5 (2) Collector(Drain) ROHM CPT3 9.5 (3) Emitt
2sc5147.pdf
2SC5147 Transistors Medium Power Transistor (Chroma Output) (300V, 0.1A) 2SC5147 Features External dimensions (Units mm) 1) High breakdown voltage. (BVCEO = 300V) 2) Low collector output capacitance. 10.0 4.5 (Typ.3pF at VCB = 30V) 3.2 2.8 3) Wide SOA. (safe operating area) 4) Ideal for color TV chroma output and amplification of 1.2 1.3 video signals. 0.8 0.75 2.54
2sc5190 e.pdf
Transistor 2SC5190 Silicon NPN epitaxial planer type For low-voltage high-frequency amplification Unit mm 2.1 0.1 0.425 1.25 0.1 0.425 Features High transition frequency fT. Small collector output capacitance Cob. 1 S-Mini type package, allowing downsizing of the equipment and 3 automatic insertion through the tape packing and the magazine 2 packing. Absolute Maximum Ratings
2sc5190.pdf
Transistor 2SC5190 Silicon NPN epitaxial planer type For low-voltage high-frequency amplification Unit mm 2.1 0.1 0.425 1.25 0.1 0.425 Features High transition frequency fT. Small collector output capacitance Cob. 1 S-Mini type package, allowing downsizing of the equipment and 3 automatic insertion through the tape packing and the magazine 2 packing. Absolute Maximum Ratings
2sc5104.pdf
Power Transistors 2SC5104 Silicon NPN triple diffusion planar type Unit mm 8.5 0.2 3.4 0.3 For high breakdown voltage high-speed switching 6.0 0.5 1.0 0.1 Features 1.5max. 1.1max. High-speed switching High collector to base voltage VCBO 0.8 0.1 0.5max. Wide area of safe operation (ASO) 2.54 0.3 Satisfactory linearity of foward current transfer ratio hFE 5.08 0.5 N
2sc5128.pdf
Power Transistors 2SC5128 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit mm 4.6 0.2 9.9 0.3 2.9 0.2 Features 3.2 0.1 High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) Full-pack package with outstanding insulation, which can be in- 2.6 0.1 stalled to the heat sink with one screw
2sc5127.pdf
Power Transistors 2SC5127, 2SC5127A Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit mm 4.6 0.2 Features 9.9 0.3 2.9 0.2 High-speed switching 3.2 0.1 High collector to base voltage VCBO Wide area of safe operation (ASO) Full-pack package with outstanding insulation, which can be in- stalled to the heat sink with one screw 2.
2sc5145.pdf
Power Transistors 2SC5145 Silicon NPN triple diffusion planar type Unit mm 8.5 0.2 3.4 0.3 For high breakdown voltage high-speed switching 6.0 0.5 1.0 0.1 Features High-speed switching High collector to base voltage VCBO 1.5max. 1.1max. Wide area of safe operation (ASO) N type package enabling direct soldering of the radiating fin to 0.8 0.1 0.5max. the printed circu
2sc5121.pdf
Power Transistors 2SC5121 Silicon NPN triple diffusion planar type For general amplification Unit mm +0.5 8.0 0.1 3.2 0.2 Features High collector to base voltage VCBO 3.16 0.1 High collector to emitter VCEO Small collector output capacitance Cob TO-126 package, which is fitted to a heat sink without any insu- lation parts Absolute Maximum Ratings (TC=25 C) 0.5 0.1
2sc5136.pdf
2SC5136 Silicon NPN Epitaxial ADE-208-223 1st. Edition Application VHF/UHF wide band amplifier Features High gain bandwidth product fT = 3.8 GHz typ High gain, low noise figure PG = 11 dB typ, NF = 2.5 dB typ at f = 900 MHz Outline SMPAK 3 1 2 1. Emitter 2. Base 3. Collector 2SC5136 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base v
2sc5140.pdf
2SC5140 Silicon NPN Epitaxial ADE-208-227A (Z) 2nd. Edition Mar. 2001 Application VHF / UHF wide band amplifier Features High gain bandwidth product fT = 9 GHz typ High gain, low noise figure PG = 15 dB typ, NF = 1.6 dB typ at f = 900 MHz Outline SMPAK 3 1 2 1. Emitter 2. Base 3. Collector Note Marking is YH . Attention This device is very sensitive to ele
2sc5138.pdf
2SC5138 Silicon NPN Epitaxial ADE-208-225A (Z) 2nd. Edition Mar. 2001 Application VHF / UHF wide band amplifier Features High gain bandwidth product fT = 6 GHz typ High gain, low noise figure PG = 13 dB typ, NF = 1.8 dB typ at f = 900 MHz Outline SMPAK 3 1 2 1. Emitter 2. Base 3. Collector Note Marking is YL . Attention This device is very sensitive to ele
2sc5141.pdf
2SC5141 Silicon NPN Epitaxial ADE-208-228A (Z) 2nd. Edition Mar. 2001 Application VHF / UHF wide band amplifier Features High gain bandwidth product fT = 5.8 GHz typ High gain, low noise figure PG = 13 dB typ, NF = 1.6 dB typ at f = 900 MHz Outline SMPAK 3 1 2 1. Emitter 2. Base 3. Collector Note Marking is YN . Attention This device is very sensitive to e
2sc5139.pdf
2SC5139 Silicon NPN Epitaxial ADE-208-226 1st. Edition Application VHF / UHF wide band amplifier Features High gain bandwidth product fT = 11 GHz typ High gain, low noise figure PG = 15 dB typ, NF = 1.1 dB typ at f = 900 MHz Outline SMPAK 3 1 2 1. Emitter 2. Base 3. Collector 2SC5139 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base
2sc5137.pdf
2SC5137 Silicon NPN Epitaxial ADE-208-224 1st. Edition Application VHF / UHF wide band amplifier Features High gain bandwidth product fT = 10 GHz typ High gain, low noise figure PG = 16.5 dB typ, NF = 1.5 dB typ at f = 900 MHz Outline SMPAK 3 1 2 1. Emitter 2. Base 3. Collector 2SC5137 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to bas
2sc5100.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC5100 DESCRIPTION With TO-3PML package Complement to type 2SA1908 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3PML) and symbol 3 Emitter Absolute maximum ratings(Tc=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base volta
2sc5124.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC5124 DESCRIPTION With TO-3PML package High voltage switchihg transistor APPLICATIONS Display horizontal deflection output Switching regulator and general purpose PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3PML) and symbol 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBO
2sc5101.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC5101 DESCRIPTION With TO-3PML package Complement to type 2SA1909 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3PML) and symbol 3 Emitter Absolute maximum ratings(Tc=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base volta
2sc5129.pdf
Product Specification www.jmnic.com Silicon Power Transistors 2SC5129 DESCRIPTION With TO-3P(H)IS package High speed High voltage Low saturation voltage APPLICATIONS Horizontal deflection output for high resolution display,colorTV High speed switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3P(H)IS)
2sc515.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC515 DESCRIPTION With TO-66 package High breakdown voltage APPLICATIONS For use in line-operated color TV chroma output circuits and sound output circuits PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-66) and symbol 3 Collector Absolute maximum ratings(Ta= ) SYMBOL PA
2sc5130.pdf
2SC5130 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) Application Switching Regulator and General Purpose Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) External Dimensions FM20(TO220F) Symbol 2SC5130 Unit Symbol Conditions 2SC5130 Unit 0.2 4.2 0.2 10.1 c0.5 VCBO 600 V ICBO VCB=500V 100max A 2.8
2sc5100.pdf
2SC5100 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1908) Application Audio and General Purpose Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) External Dimensions FM100(TO3PF) 2SC5100 Unit Symbol 2SC5100 Unit Symbol Conditions 0.2 0.2 5.5 15.6 0.2 3.45 10max A VCBO 160 V ICBO VCB=160V VCEO 120 V VEB=6V IEBO 10max A
2sc5124.pdf
2SC5124 Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) Application Display Horizontal Deflection Output, Switching Regulator and General Purpose (Ta=25 C) Absolute maximum ratings (Ta=25 C) Electrical Characteristics External Dimensions FM100(TO3PF) Symbol 2SC5124 Unit Symbol Conditions 2SC5124 Unit 0.2 0.2 5.5 15.6 ICBO1 VCB=1200V A 100m
2sc5101.pdf
2SC5101 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1909) Application Audio and General Purpose Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) External Dimensions FM100(TO3PF) Symbol 2SC5101 Unit Symbol Conditions 2SC5101 Unit 0.2 0.2 5.5 15.6 0.2 3.45 VCBO 200 V ICBO VCB=200V 10max A VCEO 140 V IEBO VEB=6V 10max A V
2sc5198 2sa1941.pdf
Complementary NPN-PNP Power Bipolar Transistor R 2SC5198 2SA1941 APPLICATIONS Audio Products Home Amplifiers Home Receivers Auto Audio Amplifiers FEATURES VCEO=140V (min) High collector voltage VCEO
2sc5171s.pdf
2SC5171S(BR3DA5171SQ) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-126 NPN Silicon NPN transistor in a TO-126 Plastic Package. / Features 2SA1930S(BR3CA1930SQ) High fT, complementary pair with 2SA1930S(BR3CA1930SQ). / Applications General power an
2sc5171i.pdf
2SC5171I(BR3DA5171I) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-251 NPN Silicon NPN transistor in a TO-251 Plastic Package. / Features 2SA1930I(BR3CA1930I) High fT, complementary pair with 2SA1930I(BR3CA1930I). / Applications General power and d
2sc5198b.pdf
RoHS 2SC5198B Series RoHS SEMICONDUCTOR Nell High Power Products Silicon NPN triple diffusion planar transistor 10A/140V/100W 15.6 0.4 4.8 0.2 9.6 2.0 0.1 3.2 0,1 2 TO-3P(B) 3 +0.2 +0.2 0.65 1.05 -0.1 -0.1 FEATURES High breakdown voltage, VCEO =140V (min) 5.45 0.1 5.45 0.1 1.4 Complementary to 2SA1941B B C E TO-3P package which can be installed to the heat
2sc5177.pdf
SMD Type Transistors NPN Transistors 2SC5177 SOT-23 Unit mm 2.9+0.1 -0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=10mA 1 2 Collector Emitter Voltage VCEO=3V +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 5 Collect
2sc5109.pdf
SMD Type Transistors NPN Transistors 2SC5109 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features Collector Current Capability IC=30mA 1 2 Collector Emitter Voltage VCEO=10V +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Colle
2sc5191.pdf
SMD Type Transistors NPN Transistors 2SC5191 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=100mA 1 2 Collector Emitter Voltage VCEO=6V +0.1 0.95-0.1 0.1+0.05 -0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 9 Collector
2sc5106.pdf
SMD Type Transistors NPN Transistors 2SC5106 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=30mA 1 2 Collector Emitter Voltage VCEO=10V +0.1 0.95-0.1 0.1+0.05 -0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collector
2sc5182.pdf
SMD Type Transistors NPN Transistors 2SC5182 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features Collector Current Capability IC=30mA Collector Emitter Voltage VCEO=3V 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 5 Collect
2sc5147 3da5147.pdf
2SC5147(3DA5147) NPN /SILICON NPN TRANSISTOR Purpose Ideal for Color TV chroma output and amplification of video signals. Features High breakdown voltage,low collector output capacitance,wide SOA. /Absolute maxim
2sc5198.pdf
2SC5198 Silicon NPN transistor Power Amplifier Applications Complementary to 2SA1941 High collector voltage VCEO=140V (min) Recommended for 100-W high-fidelity audio frequency amplifier Output stage Note1 Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
2sc5198t7tl.pdf
2SC5198T7TL Silicon NPN Power Transistor DESCRIPTION Low Collector Saturation Voltage- V = 2.0V(Min) @I = 7A CE(sat) C Good Linearity of h FE Complement to Type 2SA1941 APPLICATIONS Power amplifier applications Recommend for 70W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collect
2sc5198r 2sc5198o.pdf
SPTECH Product Specification SPTECH Silicon NPN Power Transistor 2SC5198 DESCRIPTION Low Collector Saturation Voltage- V = 2.0V(Min) @I = 7A CE(sat) C Good Linearity of h FE Complement to Type 2SA1941 APPLICATIONS Power amplifier applications Recommend for 70W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL
2sc5197r 2sc5197o.pdf
SPTECH Product Specification SPTECH Silicon NPN Power Transistor 2SC5197 DESCRIPTION Low Collector Saturation Voltage- VCE(sat)= 2.0V(Min) @IC= 6A Good Linearity of hFE Complement to Type 2SA1940 APPLICATIONS Power amplifier applications Recommend for 55W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAME
2sc5198.pdf
2SC5198 Transistor Silicon NPN Epitaxial Type Power Amplifier Applications FEATURES * High collector voltage Vceo=140V(min) * Recommended for 70W high-fidelity audio Frequency amplifier output * Complementary to 2SA1941 MAXIMUM RATINGS (Ta=25 ) Parameter Symbol Rating Unit Collector-Base Voltage VCBO 140 V Collector-Emitter Voltage VCEO 140 V Emitter-Base Voltage V
2sc5171.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC5171 DESCRIPTION High Transition Frenquency f =200MHz(Typ.) T Complementary to 2SA1930 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Driver stage amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYM
2sc5150.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC5150 DESCRIPTION High Breakdown Voltage- V = 1700V (Min) CBO High Switching Speed Low Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Horizontal deflection output for high resolution display, color TV High speed switchi
2sc5199.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC5199 DESCRIPTION High Current Capability High Power Dissipation High Collector-Emitter Breakdown Voltage- V = 160V(Min) (BR)CEO Complement to Type 2SA1942 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Reco
2sc5100.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC5100 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 120V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SA1908 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications ABSOLUTE MAXIMUM
2sc5124.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC5124 DESCRIPTION Silicon NPN diffused planar transistor Good Linearity of h FE 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for display horizontal deflection output Switching regulator and general purpose ABSOLUTE MAXIMUM RATINGS(T =2
2sc5198.pdf
isc Silicon NPN Power Transistor 2SC5198 DESCRIPTION Low Collector Saturation Voltage- V = 2.0V(Min) @I = 7A CE(sat) C Good Linearity of h FE Complement to Type 2SA1941 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Recommend for 70W high fidelity audio frequency amplifier output stage appli
2sc5101.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC5101 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 140V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SA1909 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications ABSOLUTE MAXIMUM
2sc5103.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC5103 DESCRIPTION High Collector Current -I = 5A C Low Collector Saturation Voltage Complement to Type 2SA1952 Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for use in high speed switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER
2sc5129.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC5129 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Low Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Horizontal deflection output for high resolution display, color TV. High speed switch
2sc5174.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC5174 DESCRIPTION Silicon NPN epitaxial type Low Collector Saturation Voltage High transition frequency Complementary to 2SA1932 Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Driver stage amplifier applicatio
2sc5149.pdf
isc Silicon NPN Power Transistor 2SC5149 DESCRIPTION High Breakdown Voltage V = 1500V (Min) CBO High Switching Speed Low Saturation Voltage Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Horizontal deflection output for medium resolution display color TV High speed switching applications ABSOLUT
2sc5143.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC5143 DESCRIPTION High Breakdown Voltage- V = 1700V (Min) CBO High Switching Speed Low Saturation Voltage Built-in Damper Diode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Horizontal deflection output for high resolution display& colo
2sc5128.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC5128 DESCRIPTION Collector Emitter Breakdown Voltage V = 500V(Min) (BR)CEO High Speed Switching Full-pack package with outstanding insulation, which can be in staled to the heat sink with one screw 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATI
2sc5147.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC5147 DESCRIPTION High breakdown voltage(BVceo=300V). Low collector output capacitance(Typ.3pF@Vce=30V). Wide SOA(safe operating area) Ideal for color TV chroma output and amplification of video signals 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICAT
2sc5197.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC5197 DESCRIPTION Low Collector Saturation Voltage- V = 2.0V(Min) @I = 6A CE(sat) C Good Linearity of h FE Complement to Type 2SA1940 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Recommend for 55W high fidel
2sc5191.pdf
INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC5191 DESCRIPTION Low Voltage Operation ,Low Phase Distortion Low Noise NF = 1.5 dB TYP. @V = 3 V, I = 7 mA, f = 2 GHz CE C NF = 1.7 dB TYP. @V = 1 V, I = 3 mA, f = 2 GHz CE C Large Absolute Maximum Collector Current I = 100 mA C 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and re
2sc515.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC515 DESCRIPTION With TO-66 Package Low collector saturation voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for use in line-operated color TV chroma output circuits and sound output circuits. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE
2sc5196.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC5196 DESCRIPTION Low Collector Saturation Voltage- V = 2.0V(Min) @I = 5A CE(sat) C Good Linearity of h FE Complement to Type 2SA1939 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Recommend for 40W high fidel
2sc5144.pdf
isc Silicon NPN Power Transistor 2SC5144 DESCRIPTION High Switching Speed High Breakdown Voltage- V = 1700V(Min) (BR)CBO Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1700 V CBO
Otros transistores... 2SC4672-Q , 2SC4672-R , 2SC4774GP , 2SC4793AF , 2SC4853A-4-TL-E , 2SC4938 , 2SC5027A , 2SC5027AF , C945 , 2SC5198B , 2SC5200BL , 2SC5200N , 2SC5226A-4-TL-E , 2SC5226A-5-TL-E , 2SC5227A-4-TB-E , 2SC5227A-5-TB-E , 2SC5231A-8-TL-E .
History: 3DD101E
History: 3DD101E
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Recientemente añadidas las descripciónes de los transistores:
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
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