2SC5706-H . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC5706-H
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 15 W
Tensión colector-base (Vcb): 100 V
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 400 MHz
Capacitancia de salida (Cc): 15 pF
Ganancia de corriente contínua (hfe): 200
Paquete / Cubierta: TO252
Búsqueda de reemplazo de transistor bipolar 2SC5706-H
2SC5706-H Datasheet (PDF)
2sa2039-e 2sc5706-h 2sc5706 2sc5706.pdf
Ordering number : EN6912D2SA2039/2SC5706Bipolar Transistorhttp://onsemi.com(-)50V, (-)5A, Low VCE(sat), (PNP)NPN Single TP/TP-FAApplications DC / DC converter, relay drivers, lamp drivers, motor drivers, flashFeatures Adoption of FBET and MBIT processes Large current capacitance Low collector-to-emitter saturation voltage High-speed switching High al
2sa2039 2sc5706.pdf
Ordering number : ENN6912B2SA2039 / 2SC5706PNP / NPN Epitaxial Planar Silicon Transistors2SA2039 / 2SC5706High Current Switching ApplicationsApplications DC / DC converter, relay drivers, lamp drivers, motor drivers, flash.Features Adoption of FBET and MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switchin
2sa2039 2sc5706.pdf
Ordering number : ENN69122SA2039 / 2SC5706PNP / NPN Epitaxial Planar Silicon Transistors2SA2039 / 2SC5706High Current Switching ApplicationsFeatures Package Dimensions DC-DC converter, relay drivers, lamp drivers, unit : mmmotor drivers, strobes. 2045BFeatures[2SA2039 / 2SC5706] Adoption of FBET, MBIT process.6.52.35.0 Large current capacitance.0.54
2sa2039 2sc5706.pdf
Ordering number : EN6912D2SA2039/2SC5706Bipolar Transistorhttp://onsemi.com(-)50V, (-)5A, Low VCE(sat), (PNP)NPN Single TP/TP-FAApplications DC / DC converter, relay drivers, lamp drivers, motor drivers, flashFeatures Adoption of FBET and MBIT processes Large current capacitance Low collector-to-emitter saturation voltage High-speed switching High al
2sc5706.pdf
2SC5706NPN EPITAXIAL PLANAR TRANSISTORP b Lead(Pb)-Free1.BASE32.COLLECTOR23.EMITTER 1Features:* Large current capacitanceD-PAK(TO-252)* Low collector-to-emitter saturation voltage* High-speed switching* High allowable dissipationMechanical Data:* Case : Molded Plastic* Weight : 0.925 gramsABSOLUTE MAXIMUM RATINGS(Ta=25C)Rating Symbol Value UnitVCBO80 V
2sc5706.pdf
SMD Type TransistorsNPN Transistors2SC5706TO-252Unit: mm+0.156.50-0.15+0.12.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 Features4 Collector Current Capability IC=5A Collector Emitter Voltage VCEO=80V0.127 High-speed switching. +0.10.80-0.1max Low collector-to-emitter saturation voltage High allowable power dissipation.+ 0.11 Base2.3 0
2sc5706.pdf
isc Silicon NPN Power Transistor 2SC5706DESCRIPTIONLarge current capacitanceHigh-speed switching100% avalanche testedHigh allowable power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationComplementary to 2SA2039APPLICATIONSDC/DC converter,relay drivers,lamp drivers,motordriversABSOLUTE MAXIMUM RATINGS(T =25)a
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050