2SC5994-TD-E . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC5994-TD-E
Código: FJ
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 3.5 W
Tensión colector-base (Vcb): 100 V
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 2 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 420 MHz
Capacitancia de salida (Cc): 9 pF
Ganancia de corriente contínua (hfe): 200
Paquete / Cubierta: SOT89
Búsqueda de reemplazo de transistor bipolar 2SC5994-TD-E
2SC5994-TD-E Datasheet (PDF)
2sc5994.pdf
Ordering number : ENN8035 2SC5994NPN Epitaxial Planar Silicon Transistor2SC5994High-Current Switching ApplicationsApplications Voltage regulators, relay drivers, lamp drivers, electrical equipment.Features Adoption of MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching.SpecificationsAbsolute Maximum Rat
2sc5994.pdf
2SC5994 Bipolar Transistor 50V, 2A, Low VCE(sat), NPN Single www.onsemi.com Features Adoption of MBIT Process Low Collector to Emitter Saturation Voltage Large Current Capacity ELECTRICAL CONNECTION High Speed Switching 2Typical Applications 1: Base Voltage Regulators 1 2 : Collector3: Emitter Relay Drivers Lamp Drivers 3 Electri
2sc5999.pdf
Ordering number : ENN8029 2SC5999NPN Epitaxial Planar Silicon Transistors2SC5999High-Current Switching ApplicationsApplications Relay drivers, lamp drivers, motor drivers, inverters.Features Adoption of MBIT process. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Surface mount type.SpecificationsAbsolute
2sc5998.pdf
2SC5998Silicon NPN EpitaxialHigh Frequency Medium Power AmplifierREJ03G0169-0100ZRev.1.00Apr.20.2004Features High Transition FrequencyfT = 11 GHz typ. High gain and Excellent EfficiencyMaximum Available Gain (MAG) = +22 dB typ. at VCE = 3.6 V, IC= 100 mA, f = 500 MHzPower Added Efficiency (PAE) = 70% typ. at Pin=+16 dBm, f = 500 MHz High Collector to Emitter Vol
2sa2140 2sc5993.pdf
Product NewsDelivering high breakdown voltage plus high frequency characteristics.High-fT Transistors 2SA2140/2SC5993 Overview2SA2140/2SC5993 high-fT transistors deliver a typical fTUnit : mmvalue of 100MHz or higher at VCEO of 180V while featuring high-speed switching and low-saturation voltage characteristics. Making use of these transistors assists the production of power s
2sc5993.pdf
Power Transistors2SC5993Silicon NPN epitaxial planar typeUnit: mm4.60.2For power amplification 9.90.32.90.2For TV VM circuit 3.20.1 Features Satisfactory linearity of forward current transfer ratio hFE High transition frequency (fT)1.40.2 Full-pack package which can be installed to the heat sink with one2.60.11.60.2screw.0.80.1 0.5
2sc5996.pdf
SMALL-SIGNAL TRANSISTOR2SC5996FOR LOW FREQUENCY AMPLIFY APPLICATIONSILICON NPN EPITAXIAL TYPEUnit : mmOUTLINE DRAWINGDESCRIPTIONISAHAYA 2SC5996 is a super mini package resin sealed 2.1silicon NPN epitaxial transistor for muting and switching. 0.425 0.425applicationFEATURE High Emitter to Base voltage VEBO=50VHigh Reverse hFELow ON RESIST
2sc5993.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC5993DESCRIPTIONGood Linearity of hFEHigh Collector-Emitter Breakdown Voltage-: V = 180V(Min)(BR)CEOComplement to Type 2SA2140100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplificationFor TV VM circuitABSOLUTE MAXIMUM RAT
Otros transistores... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
