2SC6145A Todos los transistores

2SC6145A Audio Amplification Transistor Features and Benefits Description LAPT (High frequency multi emitter transistor) Sanken LAPT transistors have an innovative design, produced Small package (TO-3P) by adapting advancements in the unique Sanken thin-wafer High power handling capacity, 160 W production technology. These NPN power transistors achieve Improved sound ou

2SC6145 Audio Amplification Transistor Features and Benefits Description LAPT (High frequency multi emitter transistor) Sanken LAPT transistors have an innovative design, produced Small package (TO-3P) by adapting advancements in the unique Sanken thin-wafer High power handling capacity, 160 W production technology. These NPN power transistors achieve Improved sound out

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC6145 DESCRIPTION High frequency multi emitter transistor Small package(TO-3P) High power handling capacity ,160W Complement to Type 2SA2223 Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Signal transistors for audio amplifiers Audio market ABSOLUTE MAXIMUM RATIN

2SC6140 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6140 Audio Frequency Amplifier Applications mm High collector voltage VCEO = 160 V Small collector output capacitance Cob = 12pF (typ.) High transition frequency fT = 100MHz (typ.) Complementary to 2SA2220 Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collec

2SC6142 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC6142 Unit mm High Voltage Switching Applications Switching Regulator Applications DC-DC Converter Applications MAX Excellent switching times tf = 0.15 s (typ.) High collector breakdown voltage VCES = 800

Ordering number ENA1149 2SC6144 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC6144 High-Current Switching Applications Applications Relay drivers, lamp drivers, motor drivers. Features Adoption of MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Specifications Absolute Maxi

2SC6144SG Ordering number ENA1800 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC6144SG High-Current Switching Applications Applications Relay drivers, lamp drivers, motor drivers Features Adoption of MBIT process Large current capacitance (IC=10A) Low collector-to-emitter saturation voltage (VCE(sat)=180mV(typ.)) High-speed switchi

Ordering number ENA1800B 2SC6144SG Bipolar Transistor http //onsemi.com ( ) 50V, 10A, Low VCE sat NPN TO-220F-3FS Applications Relay drivers, lamp drivers, motor drivers Features Adoption of MBIT process Large current capacitance (IC=10A) Low collector-to-emitter saturation voltage (VCE(sat)=180mV(typ.)) High-speed switching (tf=25ns(typ.)) Specifications Ab

isc Silicon NPN Power Transistors 2SC6144 DESCRIPTION Collector-Emitter Saturation Voltage- V = 0.36V(Max.)@I = 6A CE(sat) C Collector-Emitter Breakdown Voltage- V = 50V(Min) (BR) CEO Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Relay drivers,lamp drivers,motor drivers ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAME