2SC945LT1
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
   Número de Parte: 2SC945LT1
   Código: L6
   Material: Si
   Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
   Disipación total del dispositivo (Pc): 0.23
 W
   Tensión colector-base (Vcb): 60
 V
   Tensión colector-emisor (Vce): 50
 V
   Tensión emisor-base (Veb): 5
 V
   Corriente del colector DC máxima (Ic): 0.15
 A
   Temperatura operativa máxima (Tj): 150
 °C
CARACTERÍSTICAS ELÉCTRICAS
   Transición de frecuencia (ft): 150
 MHz
   Capacitancia de salida (Cc): 2.2
 pF
   Ganancia de corriente contínua (hfe): 200
		   Paquete / Cubierta: 
SOT23
				
				  
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2SC945LT1
 Datasheet (PDF)
 ..1.  Size:634K  china
 2sc945lt1.pdf 
						 
 SEMICONDUCTOR 2SC945LT1 Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR Package:SOT-23 * Collector Current: Ic= 150mA * Collector-Emitter Voltage:Vce= 50V * High Total Power Dissipation:Pc=225mW * High Hfe And Good Linearity ABSOLUTE MAXIMUM RATINGS at Ta=25  Characteristic Symbol Rating UnitCollector-Base Voltage Vcbo 60 V 
 7.1.  Size:145K  semtech
 2sc945r 2sc945o 2sc945y 2sc945p 2sc945l.pdf 
						 
2SC945 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into five groups, R, O, Y, P and L, according to its DC current gain. As complementary type the PNP transistor 2SA733 is recommended. On special request, these transistors can be 1. Emitter 2. Collector 3. Base manufactured in different pin configurations. T
 8.2.  Size:244K  mcc
 2sc945-y.pdf 
						 
MCC2SC945-YMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMicro Commercial Components2SC945-GRCA 91311Phone: (818) 701-4933Fax:   (818) 701-4939Features Capable of 0.4Watts of Power Dissipation. NPN Silicon Collector-current 0.15APlastic-Encapsulate Collector-base Voltage 60V Operating and storage junction temperature range: -55OC to +150OC
 8.3.  Size:244K  mcc
 2sc945-gr.pdf 
						 
MCC2SC945-YMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMicro Commercial Components2SC945-GRCA 91311Phone: (818) 701-4933Fax:   (818) 701-4939Features Capable of 0.4Watts of Power Dissipation. NPN Silicon Collector-current 0.15APlastic-Encapsulate Collector-base Voltage 60V Operating and storage junction temperature range: -55OC to +150OC
 8.4.  Size:194K  utc
 2sc945.pdf 
						 
UNISONIC TECHNOLOGIES CO., LTD 2SC945 NPN SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR  DESCRIPTION The UTC 2SC945 is an audio frequency amplifier high frequency OSC NPN transistor.  FEATURES * Collector-Emitter voltage:  BVCBO=50V * Collector current up to 150mA * High hFE linearity * Complimentary to UTC 2SA733  ORDERING I
 8.5.  Size:226K  no
 2sc945.pdf 
						 
ST 2SC945 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into five groups, R, O, Y, P and L, according to its DC current gain. As complementary type the PNP transistor ST 2SA733 is recommended. On special request, these transistors can be 1. Emitter 2. Collector 3. Base manufactured in different pin configurati
 8.6.  Size:272K  shenzhen
 2sc945.pdf 
						 
Shenzhen Tuofeng Semiconductor Technology Co., Ltd  SOT-23 Plastic-Encapsulate Transistors  SOT-23  2SC945 TRANSISTOR (NPN) FEATURE  1. BASE   Excellent hFE Linearity2. EMITTER   Low noise 3. COLLECTOR   Complementary to A733 MARKING:CR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 60 VVCEO Collector-Emi
 8.7.  Size:1532K  blue-rocket-elect
 2sc945m.pdf 
						 
2SC945M Rev.F Apr.-2017 DATA SHEET  / Descriptions SOT-23  NPN Silicon NPN transistor in a SOT-23 Plastic Package.  / Features ,High voltage, excellent hFE linearity.  / Applications General power amplifier application and low speed switching. 
 8.8.  Size:1959K  blue-rocket-elect
 2sc945.pdf 
						 
2SC945 Rev.E Mar.-2016 DATA SHEET  / Descriptions TO-92  NPN Silicon NPN transistor in a TO-92 Plastic Package.  / Features ,h  FE High voltage, excellent hFE linearity.  / Applications AF amplifier and low speed switching applications.  / Eq
 8.9.  Size:781K  kexin
 2sc945.pdf 
						 
SMD TypeSMD Type si o orsSMD Type TranDistdesNPN Transistors2SC945SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features Collector current up to 150mA High hFE linearity1 2 Complementary to 2SA733+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector
 8.10.  Size:260K  galaxy
 2sc945.pdf 
						 
 Product specification  Silicon Epitaxial Planar Transistor 2SC945 FEATURES Pb  High voltage and high current. Lead-free  Excellent h linearity. FE  Low noise. APPLICATIONS  Audio frequency amplifier.  SOT-23 ORDERING INFORMATION  Type No. Marking Package Code  2SC945 CR SOT-23 : none is for Lead Free package; G is for Halogen Free package
 8.11.  Size:789K  cn evvo
 2sc945-l 2sc945-h.pdf 
						 
2SC945NPN Transistors321.Base2.Emitter Features1 3.Collector Collector current up to 150mA Simplified outline(SOT-23) High hFE linearity Complementary to 2SA733 Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector to base voltage VCBO 60 VCollector to emitter voltage VCEO 50 VEmitter to base voltage VEBO 5 VCollector curren
 8.12.  Size:189K  inchange semiconductor
 2sc945.pdf 
						 
isc Silicon NPN Transistor 2SC945DESCRIPTIONHigh VoltageExcellent h linearityFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDsigned for use in driver stage of AF amplifierand low speed switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 60 VCBOV Collector-Emitter Vol
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