MJE13001A0 Todos los transistores

 

MJE13001A0 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MJE13001A0

Código: H01A

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.5 W

Tensión colector-base (Vcb): 600 V

Tensión colector-emisor (Vce): 400 V

Tensión emisor-base (Veb): 9 V

Corriente del colector DC máxima (Ic): 0.17 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 5 MHz

Ganancia de corriente contínua (hFE): 10

Encapsulados: SOT23

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MJE13001A0 datasheet

 ..1. Size:159K  foshan
 mje13001a0.pdf pdf_icon

MJE13001A0

MJE13001A0(3DD13001A0) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 600 V CBO V 400 V CEO V 9.0 V EBO I 0.17 A C P (Ta=25 ) 0.5 W C T 150 j T -55 150 stg

 5.1. Size:315K  sisemi
 mje13001ah.pdf pdf_icon

MJE13001A0

 5.2. Size:153K  foshan
 mje13001a2.pdf pdf_icon

MJE13001A0

MJE13001A2(3DD13001A2) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 600 V CBO V 400 V CEO V 9.0 V EBO I 0.17 A C P (Ta=25 ) 0.8 W C T 150 j T -55 150 stg

 5.3. Size:187K  foshan
 mje13001at.pdf pdf_icon

MJE13001A0

MJE13001AT(3DD13001AT) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 600 V CBO V 400 V CEO V 9.0 V EBO I 0.17 A C P (Ta=25 ) 0.8 W C T 150 j T -55 150 stg

MOSTRAR MÁS

Otros transistores... 2SD2098PGP , 2SD2137A , 2SD2144S , 2SD2152 , 2SD2173 , 2SD2227S , 2SD2318 , MJE1123 , 2SC5200 , MJE13001A1 , MJE13001A2 , MJE13001AT , MJE13001B1 , MJE13001C0 , MJE13001C1 , MJE13001C2 , MJE13001CT .

 

 

 


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