MJE13001A0 Todos los transistores

 

MJE13001A0 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MJE13001A0
   Código: H01A
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.5 W
   Tensión colector-base (Vcb): 600 V
   Tensión colector-emisor (Vce): 400 V
   Tensión emisor-base (Veb): 9 V
   Corriente del colector DC máxima (Ic): 0.17 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 5 MHz
   Ganancia de corriente contínua (hfe): 10
   Paquete / Cubierta: SOT23
 

 Búsqueda de reemplazo de MJE13001A0

   - Selección ⓘ de transistores por parámetros

 

MJE13001A0 Datasheet (PDF)

 ..1. Size:159K  foshan
 mje13001a0.pdf pdf_icon

MJE13001A0

MJE13001A0(3DD13001A0) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applications. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V CBO V 400 V CEO V 9.0 V EBO I 0.17 A C P (Ta=25) 0.5 W CT 150 j T -55150 stg

 5.1. Size:315K  sisemi
 mje13001ah.pdf pdf_icon

MJE13001A0

Shenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationNPN MJE /MJE SERIES TRANSISTORS MJE13001AHNPN MJE /MJE SERIES TRANSISTORS MJE13001AHNPN MJE

 5.2. Size:153K  foshan
 mje13001a2.pdf pdf_icon

MJE13001A0

MJE13001A2(3DD13001A2) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applications. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V CBO V 400 V CEO V 9.0 V EBO I 0.17 A C P (Ta=25) 0.8 W CT 150 j T -55150 stg

 5.3. Size:187K  foshan
 mje13001at.pdf pdf_icon

MJE13001A0

MJE13001AT(3DD13001AT) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applications. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V CBO V 400 V CEO V 9.0 V EBO I 0.17 A C P (Ta=25) 0.8 W CT 150 j T -55150 stg

MOSTRAR MÁS

Otros transistores... 2SD2098PGP , 2SD2137A , 2SD2144S , 2SD2152 , 2SD2173 , 2SD2227S , 2SD2318 , MJE1123 , BD139 , MJE13001A1 , MJE13001A2 , MJE13001AT , MJE13001B1 , MJE13001C0 , MJE13001C1 , MJE13001C2 , MJE13001CT .

History: 40911 | 3CK117 | BC178AP | 2N1471 | 40896 | 847BT | BC860BW

 

 
Back to Top

 


 
.