MJE13001E1 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

MJE13001E1(3DD13001E1) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applications. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V CBO V 400 V CEO V 9.0 V EBO I 0.45 A C P (Ta=25) 1.0 W CT 150 j T -55150

MJE13001E2(3DD13001E2) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applications. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V CBO V 400 V CEO V 9.0 V EBO I 0.45 A C P (Ta=25) 1.0 W CT 150 j T -55150

UNISONIC TECHNOLOGIES CO., LTD MJE13001-P NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR FEATURES * Collector-base voltage: V(BR)CBO=600V * Collector current: IC=0.2A ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 MJE13001-PL-x-T92-B MJE13001-PG-x-T92-B TO-92 B C E Tape Box MJE13001-PL-x-T92-K MJE13001-PG-x-T92-K

UNISONIC TECHNOLOGIES CO., LTD MJE13001 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR FEATURES * Collector-base voltage: V(BR)CBO=600V * Collector current: IC=0.2A ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 - MJE13001G-x-AB3-A-R SOT-89 E C B Tape Reel- MJE13001G-x-AB3-F-R SOT-89 B C E Tape ReelMJE13001

Spec. No. : HA200213HI-SINCERITYIssued Date : 2002.06.01Revised Date : 2005.02.05MICROELECTRONICS CORP.Page No. : 1/4HMJE13001NPN Triple Diffused Planar Type High Voltage TransistorDescriptionThe HMJE13001 is a medium power transistor designed for use in switchingapplications.TO-92Features High breakdown voltage Low collector saturation voltage Fast switch

Shenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationNPN BUL / BUL SERIES TRANSISTORS MJE13001HNPN BUL / BUL SERIES TRANSISTORS MJE13001HNPN BUL

Shenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationNPN MJE /MJE SERIES TRANSISTORS MJE13001NPN MJE /MJE SERIES TRANSISTORS MJE13001NPN MJE

Shenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationNPN MJE /MJE SERIES TRANSISTORS MJE13001AHNPN MJE /MJE SERIES TRANSISTORS MJE13001AHNPN MJE

MJE13001C1 Rev.F Mar.-2016 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features High Voltage Capability High Speed Switching. / Applications ,,High frequency electronic li

MJE13001DE1(3DD13001DE1) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600

MJE13001B1(3DD13001B1) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V

MJE13001A2(3DD13001A2) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applications. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V CBO V 400 V CEO V 9.0 V EBO I 0.17 A C P (Ta=25) 0.8 W CT 150 j T -55150 stg

MJE13001C1(3DD13001C1) NPN /SILICON NPN TRANSISTOR:Purpose: High frequency electronic lighting ballast applications./Absolute maximum ratings(Ta=25) Symbol Rating UnitVCBO 600 VVCEO 400 VVEBO 9.0 VIC 0.25 APC(Ta=25) 1.0 WTj 150 Tstg -55150 /Electrical charac

MJE13001AT(3DD13001AT) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applications. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V CBO V 400 V CEO V 9.0 V EBO I 0.17 A C P (Ta=25) 0.8 W CT 150 j T -55150 stg

MJE13001A1(3DD13001A1) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applications. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V CBO V 400 V CEO V 9.0 V EBO I 0.17 A C P (Ta=25) 0.8 W CT 150 j T -55150 stg

MJE13001CT(3DD13001CT) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applications. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V CBO V 400 V CEO V 9.0 V EBO I 0.25 A C P (Ta=25) 1.0 W CT 150 j T -55150 stg

MJE13001C0(3DD13001C0) NPN /SILICON NPN TRANSISTOR:Purpose: High frequency electronic lighting ballast applications./Absolute maximum ratings(Ta=25) Symbol Rating UnitVCBO 600 VVCEO 400 VVEBO 9.0 VIC 0.25 APC(Ta=25) 0.65 WTj 150 Tstg -55150 /Electrical chara

MJE13001C2(3DD13001C2) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applications. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V CBO V 400 V CEO V 9.0 V EBO I 0.25 A C P (Ta=25) 1.0 W CT 150 j T -55150 stg

MJE13001A0(3DD13001A0) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applications. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V CBO V 400 V CEO V 9.0 V EBO I 0.17 A C P (Ta=25) 0.5 W CT 150 j T -55150 stg