MJE13002F5 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MJE13002F5  📄📄 

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 20 W

Tensión colector-base (Vcb): 600 V

Tensión colector-emisor (Vce): 400 V

Tensión emisor-base (Veb): 9 V

Corriente del colector DC máxima (Ic): 0.8 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 5 MHz

Ganancia de corriente contínua (hFE): 10

Encapsulados: TO126

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MJE13002F5 datasheet

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 mje13002f5.pdf pdf_icon

MJE13002F5

MJE13002F5(3DD13002F5) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications converters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 600 V

 5.1. Size:407K  blue-rocket-elect
 mje13002f1.pdf pdf_icon

MJE13002F5

MJE13002F1(BR3DD13002F1K) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features High Voltage Capability High Speed Switching. / Applications High frequenc

 5.2. Size:197K  foshan
 mje13002f6.pdf pdf_icon

MJE13002F5

MJE13002F6(3DD13002F6) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications converters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 600 V

 5.3. Size:193K  foshan
 mje13002f2.pdf pdf_icon

MJE13002F5

MJE13002F2(3DD13002F2) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications converters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 600 V

MOSTRAR MÁS

Otros transistores... MJE13001E1, MJE13001E2, MJE13002DE1, MJE13002DG1, MJE13002E1, MJE13002E2, MJE13002F1, MJE13002F2, 13007, MJE13002F6, MJE13002G, MJE13002G1, MJE13002G2, MJE13002G5, MJE13002G6, MJE13002H1, MJE13002H5