MJE13003DG1 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MJE13003DG1 📄📄
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 1 W
Tensión colector-base (Vcb): 600 V
Tensión colector-emisor (Vce): 400 V
Tensión emisor-base (Veb): 9 V
Corriente del colector DC máxima (Ic): 1.3 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 5 MHz
Ganancia de corriente contínua (hFE): 10
Encapsulados: TO92
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MJE13003DG1 datasheet
..1. Size:412K foshan
mje13003dg1.pdf 
MJE13003DG1(3DD13003DG1) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications converters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 600 V
4.1. Size:428K foshan
mje13003dg5.pdf
MJE13003DG5(3DD13003DG5) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications converters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 700
5.1. Size:204K utc
mje13003d.pdf
UNISONIC TECHNOLOGIES CO., LTD MJE13003D NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The UTC MJE13003D is a NPN Power Transistor. It is intended to be used in applications requiring medium voltage capability and high switching speeds. FEATURES * Fast-Switching And High Voltage Capability * Dynamic Parameters With Low Spread
5.2. Size:126K utc
mje13003d-p.pdf
UNISONIC TECHNOLOGIES CO., LTD MJE13003D-P Preliminary NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The UTC MJE13003D-P is a NPN Power Transistor. It is intended to be used in applications requiring medium voltage capability and high switching speeds. FEATURES * Fast-Switching And High Voltage Capability * Dynamic Parameters W
5.3. Size:51K hsmc
hmje13003d.pdf
Spec. No. HD200207 HI-SINCERITY Issued Date 1993.04.12 Revised Date 2007.09.04 MICROELECTRONICS CORP. Page No. 1/5 HMJE13003D NPN EPITAXIAL PLANAR TRANSISTOR Description High Voltage, High Speed Power Switch TO-126ML Switch Regulators PWM Inverters and Motor Controls Solenoid and Relay Drivers Deflection Circuits Absolute Maximum Ratings
5.6. Size:913K blue-rocket-elect
mje13003di1g.pdf
MJE13003DI1G Rev.B May.-2020 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features High Voltage Capability High Speed Switching. HF Product. / Applications
5.7. Size:299K first silicon
mje13003d.pdf
SEMICONDUCTOR MJE13003D TECHNICAL DATA SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE AND HIGH SPEED SWITCHING APPLICATION. A I C J FEATURES Excellent Switching Times ton=1.1 S(Max.), tf=0.5 S(Max.), at IC=1.0A DIM MILLIMETERS A 6 50 0 2 High Collector Voltage VCBO=700V. B 5 60 0 2 C 5 20 0 2 D 1 50 0 2 MAXIMUM RATING (Ta=25 C) E 2 70 0 2 F 2 30 0 1
5.8. Size:261K foshan
mje13003dn5.pdf
MJE13003DN5(3DD13003DN5) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications converters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 700 V
5.9. Size:238K foshan
mje13003dk1.pdf
MJE13003DK1(3DD13003DK1) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications converters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 600 V
5.10. Size:346K foshan
mje13003di5.pdf
MJE13003DI5(3DD13003DI5) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications converters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 800 V
5.11. Size:291K foshan
mje13003di1.pdf
MJE13003DI1(3DD13003DI1) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications converters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 600 V
5.12. Size:238K foshan
mje13003dk3.pdf
MJE13003DK3(3DD13003DK3) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications converters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 700 V
5.13. Size:246K foshan
mje13003dk5.pdf
MJE13003DK5(3DD13003DK5) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications converters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 600 V
5.14. Size:302K foshan
mje13003di3.pdf
MJE13003DI3(3DD13003DI3) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications converters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 800 V
5.15. Size:244K foshan
mje13003dk7.pdf
MJE13003DK7(3DD13003DK7) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications converters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 600 V
5.16. Size:128K inchange semiconductor
mje13003d.pdf
INCHANGE Semiconductor Product Specification Silicon NPN Power Transistor MJE13003D DESCRIPTION High Voltage Capability High Speed Switching Wide Area of Safe Operation APPLICATIONS Fluorescent lamp Electronic ballast Electronic transformer Switch mode power supply ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 7
Otros transistores... MJE13002G6, MJE13002H1, MJE13002H5, MJE13002H6, MJE13002I5, MJE13002I6, MJE13002I7, MJE13002VH1, 2SC2073, MJE13003DG5, MJE13003DI1, MJE13003DI3, MJE13003DI5, MJE13003DK1, MJE13003DK3, MJE13003DK5, MJE13003DK7
