MJE13003DK3 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MJE13003DK3  📄📄 

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 30 W

Tensión colector-base (Vcb): 700 V

Tensión colector-emisor (Vce): 400 V

Tensión emisor-base (Veb): 9 V

Corriente del colector DC máxima (Ic): 1.75 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 5 MHz

Ganancia de corriente contínua (hFE): 10

Encapsulados: TO251

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MJE13003DK3 datasheet

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 mje13003dk3.pdf pdf_icon

MJE13003DK3

MJE13003DK3(3DD13003DK3) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications converters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 700 V

 4.1. Size:238K  foshan
 mje13003dk1.pdf pdf_icon

MJE13003DK3

MJE13003DK1(3DD13003DK1) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications converters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 600 V

 4.2. Size:246K  foshan
 mje13003dk5.pdf pdf_icon

MJE13003DK3

MJE13003DK5(3DD13003DK5) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications converters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 600 V

 4.3. Size:244K  foshan
 mje13003dk7.pdf pdf_icon

MJE13003DK3

MJE13003DK7(3DD13003DK7) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications converters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 600 V

MOSTRAR MÁS

Otros transistores... MJE13002I7, MJE13002VH1, MJE13003DG1, MJE13003DG5, MJE13003DI1, MJE13003DI3, MJE13003DI5, MJE13003DK1, MJE340, MJE13003DK5, MJE13003DK7, MJE13003DN5, MJE13003E1, MJE13003F1, MJE13003F2, MJE13003F5, MJE13003F6