MJE13003F2 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MJE13003F2
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 1 W
Tensión colector-base (Vcb): 600 V
Tensión colector-emisor (Vce): 400 V
Tensión emisor-base (Veb): 9 V
Corriente del colector DC máxima (Ic): 0.5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 5 MHz
Ganancia de corriente contínua (hfe): 10
Paquete / Cubierta: TO92L
Búsqueda de reemplazo de transistor bipolar MJE13003F2
MJE13003F2 Datasheet (PDF)
mje13003f2.pdf
MJE13003F2(3DD13003F2) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V
mje13003f1.pdf
MJE13003F1 Rev.E Mar.-2016 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features High Voltage Capability High Speed Switching. / Applications High frequency electroni
mje13003f5.pdf
MJE13003F5 Rev.F Mar.-2016 DATA SHEET / Descriptions TO-126(R) NPN Silicon NPN transistor in a TO-126(R) Plastic Package. / Features High Voltage Capability High Speed Switching. / Applications High frequency
mje13003ft.pdf
MJE13003FT Rev.E Mar.-2016 DATA SHEET / Descriptions SOT-89 NPN Silicon NPN transistor in a SOT-89Plastic Package. / Features High Speed Switching / Applications High frequency electronic lighting ballast applications,conv
mje13003f1.pdf
MJE13003F1(3DD13003F1) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V
mje13003f5.pdf
MJE13003F5(3DD13003F5) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V
mje13003f6.pdf
MJE13003F6(3DD13003F6) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V
mje13003ft.pdf
MJE13003FT(3DD13003FT) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V
Otros transistores... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050