MJE13003F6 Todos los transistores

 

MJE13003F6 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MJE13003F6
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 20 W
   Tensión colector-base (Vcb): 600 V
   Tensión colector-emisor (Vce): 400 V
   Tensión emisor-base (Veb): 9 V
   Corriente del colector DC máxima (Ic): 0.5 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 5 MHz
   Ganancia de corriente contínua (hfe): 10
   Paquete / Cubierta: TO126F

 Búsqueda de reemplazo de transistor bipolar MJE13003F6

 

MJE13003F6 Datasheet (PDF)

 ..1. Size:200K  foshan
mje13003f6.pdf

MJE13003F6 MJE13003F6

MJE13003F6(3DD13003F6) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V

 5.1. Size:774K  blue-rocket-elect
mje13003f1.pdf

MJE13003F6 MJE13003F6

MJE13003F1 Rev.E Mar.-2016 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features High Voltage Capability High Speed Switching. / Applications High frequency electroni

 5.2. Size:798K  blue-rocket-elect
mje13003f5.pdf

MJE13003F6 MJE13003F6

MJE13003F5 Rev.F Mar.-2016 DATA SHEET / Descriptions TO-126(R) NPN Silicon NPN transistor in a TO-126(R) Plastic Package. / Features High Voltage Capability High Speed Switching. / Applications High frequency

 5.3. Size:697K  blue-rocket-elect
mje13003ft.pdf

MJE13003F6 MJE13003F6

MJE13003FT Rev.E Mar.-2016 DATA SHEET / Descriptions SOT-89 NPN Silicon NPN transistor in a SOT-89Plastic Package. / Features High Speed Switching / Applications High frequency electronic lighting ballast applications,conv

 5.4. Size:192K  foshan
mje13003f1.pdf

MJE13003F6 MJE13003F6

MJE13003F1(3DD13003F1) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V

 5.5. Size:193K  foshan
mje13003f2.pdf

MJE13003F6 MJE13003F6

MJE13003F2(3DD13003F2) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V

 5.6. Size:250K  foshan
mje13003f5.pdf

MJE13003F6 MJE13003F6

MJE13003F5(3DD13003F5) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V

 5.7. Size:216K  foshan
mje13003ft.pdf

MJE13003F6 MJE13003F6

MJE13003FT(3DD13003FT) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V

Otros transistores... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

History: MJE201

 

 
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History: MJE201

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