MJE13003G5 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MJE13003G5  📄📄 

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 30 W

Tensión colector-base (Vcb): 600 V

Tensión colector-emisor (Vce): 400 V

Tensión emisor-base (Veb): 9 V

Corriente del colector DC máxima (Ic): 0.75 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 5 MHz

Ganancia de corriente contínua (hFE): 10

Encapsulados: TO126

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MJE13003G5 datasheet

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MJE13003G5

MJE13003G5(3DD13003G5) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications converters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 600 V

 5.1. Size:107K  onsemi
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MJE13003G5

MJE13003 SWITCHMODEt Series NPN Silicon Power Transistor These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE applications http //onsemi.com such as Switching Regulators, Inverters, Motor Controls, Solenoid/Relay drivers and Deflection circuits. 1.5 AMPERES Feat

 5.2. Size:212K  foshan
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MJE13003G5

MJE13003G1(3DD13003G1) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications converters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 600 V

 5.3. Size:219K  foshan
 mje13003g6.pdf pdf_icon

MJE13003G5

MJE13003G6(3DD13003G6) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications converters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 600 V

MOSTRAR MÁS

Otros transistores... MJE13003E1, MJE13003F1, MJE13003F2, MJE13003F5, MJE13003F6, MJE13003FT, MJE13003G, MJE13003G1, TIP127, MJE13003G6, MJE13003H1, MJE13003H3, MJE13003H5, MJE13003H6, MJE13003HK5, MJE13003HN6, MJE13003I1