MJE13003L3 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MJE13003L3  📄📄 

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 40 W

Tensión colector-base (Vcb): 900 V

Tensión colector-emisor (Vce): 530 V

Tensión emisor-base (Veb): 9 V

Corriente del colector DC máxima (Ic): 1.5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 5 MHz

Ganancia de corriente contínua (hFE): 10

Encapsulados: TO251

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MJE13003L3 datasheet

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 mje13003l3.pdf pdf_icon

MJE13003L3

MJE13003L3(3DD13003L3) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications converters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 900 V

 5.1. Size:277K  foshan
 mje13003l1.pdf pdf_icon

MJE13003L3

MJE13003L1(3DD13003L1) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications converters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 900 V

 5.2. Size:309K  foshan
 mje13003lf5.pdf pdf_icon

MJE13003L3

MJE13003LF5(3DD13003LF5) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications converters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 400 V

 5.3. Size:283K  foshan
 mje13003l5.pdf pdf_icon

MJE13003L3

MJE13003L5(3DD13003L5) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications converters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 900 V

MOSTRAR MÁS

Otros transistores... MJE13003K, MJE13003K3, MJE13003K4, MJE13003K5, MJE13003K6, MJE13003K7, MJE13003K8, MJE13003L1, 2SD669A, MJE13003L5, MJE13003L6, MJE13003LF1, MJE13003LF5, MJE13003M1, MJE13003M3, MJE13003M5, MJE13003M6