MJE13003M3 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MJE13003M3  📄📄 

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 40 W

Tensión colector-base (Vcb): 700 V

Tensión colector-emisor (Vce): 400 V

Tensión emisor-base (Veb): 9 V

Corriente del colector DC máxima (Ic): 1.8 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 5 MHz

Ganancia de corriente contínua (hFE): 10

Encapsulados: TO251

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MJE13003M3 datasheet

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 mje13003m3.pdf pdf_icon

MJE13003M3

MJE13003M3(3DD13003M3) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications converters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 700 V

 5.1. Size:197K  foshan
 mje13003m7.pdf pdf_icon

MJE13003M3

MJE13003M7(3DD13003M7) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications converters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 700 V

 5.2. Size:191K  foshan
 mje13003m8.pdf pdf_icon

MJE13003M3

MJE13003M8(3DD13003M8) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications converters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 700 V

 5.3. Size:187K  foshan
 mje13003m5.pdf pdf_icon

MJE13003M3

MJE13003M5(3DD13003M5) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications converters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit VCBO 700 V VCEO

MOSTRAR MÁS

Otros transistores... MJE13003K8, MJE13003L1, MJE13003L3, MJE13003L5, MJE13003L6, MJE13003LF1, MJE13003LF5, MJE13003M1, BC639, MJE13003M5, MJE13003M6, MJE13003M7, MJE13003M8, MJE13003N5, MJE13003N8, MJE13003VF1, MJE13003VG1