MJE13003VH5 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MJE13003VH5

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 20 W

Tensión colector-base (Vcb): 400 V

Tensión colector-emisor (Vce): 200 V

Tensión emisor-base (Veb): 9 V

Corriente del colector DC máxima (Ic): 2 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 4 MHz

Ganancia de corriente contínua (hFE): 10

Encapsulados: TO126

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MJE13003VH5 datasheet

 ..1. Size:203K  foshan
 mje13003vh5.pdf pdf_icon

MJE13003VH5

MJE13003VH5 3DD13003VH5 NPN /SILICON NPN TRANSISTOR RoHS Purpose High voltage capability,high speed switching,wide soa,RoHS compliant. 110V Features Suitable for 110V circuit mode,fluorescent lamp,electronic ballast.

 4.1. Size:196K  foshan
 mje13003vh1.pdf pdf_icon

MJE13003VH5

 5.1. Size:418K  blue-rocket-elect
 mje13003vk1.pdf pdf_icon

MJE13003VH5

MJE13003VK1(BR3DD13003VK1K) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features High Voltage Capability High Speed Switching. / Applications 110V Suitable for 110V circuit mode, fluore

 5.2. Size:446K  blue-rocket-elect
 mje13003vk7.pdf pdf_icon

MJE13003VH5

MJE13003VK7(BR3DD13003VK7R) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220 NPN Silicon NPN transistor in a TO-220 Plastic Package. / Features RoHS High voltage capability, high speed switching, wide soa, RoHS compliant. / Applications 110V

MOSTRAR MÁS

Otros transistores... MJE13003M7, MJE13003M8, MJE13003N5, MJE13003N8, MJE13003VF1, MJE13003VG1, MJE13003VG5, MJE13003VH1, MJE350, MJE13003VI1, MJE13003VI5, MJE13003VK1, MJE13003VK3, MJE13003VK5, MJE13003VK7, MJE13003VN5, MJE13003VN7