MJE13009-3PN
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MJE13009-3PN
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 100
W
Tensión colector-base (Vcb): 700
V
Tensión colector-emisor (Vce): 400
V
Tensión emisor-base (Veb): 9
V
Corriente del colector DC máxima (Ic): 12
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 4
MHz
Capacitancia de salida (Cc): 180
pF
Ganancia de corriente contínua (hfe): 6
Paquete / Cubierta:
TO3PN
Búsqueda de reemplazo de transistor bipolar MJE13009-3PN
MJE13009-3PN
Datasheet (PDF)
..1. Size:173K inchange semiconductor
mje13009-3pn.pdf
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors MJE13009 DESCRIPTION With TO-3PN package High voltage ,high speed APPLICATIONS Particularly suited for 115V and 220V switchmode applications such as switching regulators,inverters ,motor controls,solenoid/ relay drivers and deflection circuits PINNING PIN DESCRIPTION1 Base Collector;con
5.1. Size:189K onsemi
mje13009-d.pdf
MJE13009GSWITCHMODEt SeriesNPN Silicon PowerTransistorsThe MJE13009G is designed for high-voltage, high-speed powerswitching inductive circuits where fall time is critical. They are http://onsemi.comparticularly suited for 115 and 220 V SWITCHMODE applicationssuch as Switching Regulators, Inverters, Motor Controls,12 AMPERESolenoid/Relay drivers and Deflection circuits.NPN S
5.2. Size:440K utc
mje13009-k.pdf
UNISONIC TECHNOLOGIES CO., LTD MJE13009-K NPN SILICON TRANSISTOR SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS DESCRIPTION The MJE13009-K is designed for high-voltage, high-speedpower switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V switch mode applications such as Switching Regulators, Inverters, Motor Controls,Sole
5.3. Size:424K utc
mje13009-p.pdf
UNISONIC TECHNOLOGIES CO., LTD MJE13009-P NPN SILICON TRANSISTOR SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS DESCRIPTION The MJE13009-P is designed for high-voltage, high-speedpower switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V switch mode applications such as Switching Regulators, Inverters, Motor Controls,Sole
Otros transistores... 2N3200
, 2N3201
, 2N3202
, 2N3203
, 2N3204
, 2N3205
, 2N3206
, 2N3207
, B772
, 2N3209
, 2N3209AQF
, 2N3209CSM
, 2N3209DCSM
, 2N3209L
, 2N321
, 2N3210
, 2N3211
.