MJE13009Z7 Todos los transistores

 

MJE13009Z7 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MJE13009Z7

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 100 W

Tensión colector-base (Vcb): 700 V

Tensión colector-emisor (Vce): 400 V

Tensión emisor-base (Veb): 9 V

Corriente del colector DC máxima (Ic): 12 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 5 MHz

Ganancia de corriente contínua (hFE): 10

Encapsulados: TO220

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MJE13009Z7 datasheet

 ..1. Size:233K  foshan
 mje13009z7.pdf pdf_icon

MJE13009Z7

MJE13009Z7(3DD13009Z7) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 700 V CBO V 400 V CEO V 9.0 V EBO I 12 A C P (Ta=25 ) 2.0 W C P (Tc=25 ) 100 W C T 150 j

 5.1. Size:449K  blue-rocket-elect
 mje13009z8.pdf pdf_icon

MJE13009Z7

 5.2. Size:450K  blue-rocket-elect
 mje13009zj.pdf pdf_icon

MJE13009Z7

MJE13009ZJ(BR3DD13009ZJ) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220S NPN Silicon NPN transistor in a TO-220S Plastic Package. / Features High VCEO High IC. / Applications High frequency electronic lighting ballast applications. / Equ

 5.3. Size:232K  foshan
 mje13009z9.pdf pdf_icon

MJE13009Z7

MJE13009Z9(3DD13009Z9) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 700 V CBO V 400 V CEO V 9.0 V EBO I 12 A C P (Ta=25 ) 2.0 W C P (Tc=25 ) 100 W C T 150 j

MOSTRAR MÁS

Otros transistores... MJE13007X7 , MJE13007X8 , MJE13007X9 , MJE13009-3PN , MJE13009G , MJE13009X7 , MJE13009X8 , MJE13009X9 , 2SC2073 , MJE13009Z8 , MJE13009Z9 , MJE13011 , MJE1320-ISC , MJE15028G , MJE15029G , MJE15030G , MJE15031G .

 

 

 

 

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