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MJE2955TG . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MJE2955TG
   Código: MJE2955T
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 75 W
   Tensión colector-base (Vcb): 70 V
   Tensión colector-emisor (Vce): 60 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 10 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 2 MHz
   Ganancia de corriente contínua (hfe): 20
   Paquete / Cubierta: TO220AB
 

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MJE2955TG Datasheet (PDF)

 ..1. Size:135K  onsemi
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MJE2955TG

MJE2955T (PNP)MJE3055T (NPN)Complementary SiliconPlastic Power TransistorsThese devices are designed for use in general-purpose amplifier andswitching applications. http://onsemi.comFeatures10 AMPERE DC Current Gain Specified to 10 ACOMPLEMENTARY SILICON High Current Gain - Bandwidth Product -POWER TRANSISTORSfT = 2.0 MHz (Min) @ IC 60 VOLTS - 75 WATTS= 500 mAd

 6.1. Size:129K  motorola
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MJE2955TG

Order this documentMOTOROLAby MJE2955T/DSEMICONDUCTOR TECHNICAL DATAPNP*MJE2955TComplementary Silicon PlasticNPN*MJE3055TPower Transistors. . . designed for use in generalpurpose amplifier and switching applications.*Motorola Preferred Device DC Current Gain Specified to 10 Amperes High Current Gain Bandwidth Product 10 AMPERE

 6.2. Size:59K  st
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MJE2955TG

MJE2955TMJE3055TCOMPLEMENTARY SILICON POWER TRANSISTORS STMicroelectronics PREFERREDSALESTYPES COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The MJE3055T is a silicon Epitaxial-Base NPNtransistor in Jedec TO-220 package. It isintended for power switching circuits andgeneral-purpose amplifiers. The complementary 32PNP type is MJE2955T.1TO-220INTERNAL SCHEMATIC DIA

 6.3. Size:37K  fairchild semi
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MJE2955TG

MJE2955TGeneral Purpose and Switching Applications DC Current Gain Specified to IC = 10 A High Current Gain Bandwidth Product : fT = 2MHz (Min.)TO-22011.Base 2.Collector 3.EmitterPNP Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage - 70 V VCEO Collector-Emitter Voltage - 60 V VEBO Emi

Otros transistores... MJE200G , MJE210G , MJE210T , MJE243G , MJE253G , MJE270G , MJE271G , MJE2955A , 2SB817 , MJE3055A , MJE3055TG , MJE340G , MJE3439G , MJE344G , MJE371G , MJE4343G , MJE5730G .

History: D43CJ3 | NJW0302G

 

 
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