MJE3055TG . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

MJE2955T (PNP)MJE3055T (NPN)Complementary SiliconPlastic Power TransistorsThese devices are designed for use in general-purpose amplifier andswitching applications. http://onsemi.comFeatures10 AMPERE DC Current Gain Specified to 10 ACOMPLEMENTARY SILICON High Current Gain - Bandwidth Product -POWER TRANSISTORSfT = 2.0 MHz (Min) @ IC 60 VOLTS - 75 WATTS= 500 mAd

Order this documentMOTOROLAby MJE2955T/DSEMICONDUCTOR TECHNICAL DATAPNP*MJE2955TComplementary Silicon PlasticNPN*MJE3055TPower Transistors. . . designed for use in generalpurpose amplifier and switching applications.*Motorola Preferred Device DC Current Gain Specified to 10 Amperes High Current Gain Bandwidth Product 10 AMPERE

MJE2955TMJE3055TCOMPLEMENTARY SILICON POWER TRANSISTORS STMicroelectronics PREFERREDSALESTYPES COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The MJE3055T is a silicon Epitaxial-Base NPNtransistor in Jedec TO-220 package. It isintended for power switching circuits andgeneral-purpose amplifiers. The complementary 32PNP type is MJE2955T.1TO-220INTERNAL SCHEMATIC DIA

MJE3055TGeneral Purpose and Switching Applications DC Current Gain Specified to IC =10A High Current Gain-Bandwidth Product : fT = 2MHz (Min.)TO-22011.Base 2.Collector 3.EmitterNPN Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector -Base Voltage 70 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-

MJE2955T (PNP),MJE3055T (NPN)Complementary SiliconPlastic Power TransistorsThese devices are designed for use in general-purpose amplifier andswitching applications. www.onsemi.comFeatures10 AMPERE High Current Gain - Bandwidth ProductCOMPLEMENTARY SILICON These Devices are Pb-Free and are RoHS Compliant*POWER TRANSISTORS60 VOLTS - 75 WATTSMAXIMUM RATINGSRating

UNISONIC TECHNOLOGIES CO., LTD MJE3055T NPN SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR DESCRIPTION The UTC MJE3055T is designed for general purpose of amplifier and switching applications. Lead-free: MJE3055TL Halogen-free: MJE3055TG ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Normal Lead Free Plating Halogen Free 1 2 3MJE3055T-TA3-T MJE3055TL

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyPLASTIC POWER TRANSISTORS MJE2955T PNPMJE3055T NPNTO-220Plastic PackageWith excellent Safe Operating Area, ideal for Hi-Fi Amplifier and Switching Regulator ApplicationsABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNITVCEO Collector Emitter Voltage 60 VCollector Base Voltage VCB

Spec. No. : HE6737HI-SINCERITYIssued Date : 1993.09.24Revised Date : 2004.11.19MICROELECTRONICS CORP.Page No. : 1/4HMJE3055TNPN EPITAXIAL PLANAR TRANSISTORDescriptionThe HMJE3055T is designed for general purpose of amplifier and switchingapplications.TO-220Absolute Maximum Ratings (TA=25C) Maximum TemperatureStorage Temperature ..................................

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJE3055T DESCRIPTION Collector-Emitter Breakdown Voltage- : V(BR)CEO = 60V(Min) High DC Current Gain- : hFE= 20-100@IC= 4A Complement to Type MJE2955T APPLICATIONS Designed for use in general-purpose amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL P