MJE5742G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MJE5742G
Código: MJE5742
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 100 W
Tensión colector-emisor (Vce): 400 V
Tensión emisor-base (Veb): 8 V
Corriente del colector DC máxima (Ic): 8 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 50
Paquete / Cubierta: TO220AB
Búsqueda de reemplazo de MJE5742G
MJE5742G Datasheet (PDF)
mje5742g.pdf

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mje5740r.pdf

Order this documentMOTOROLAby MJE5740/DSEMICONDUCTOR TECHNICAL DATAMJE5740*MJE5741NPN Silicon PowerMJE5742*Darlington Transistors*Motorola Preferred DeviceThe MJE5740, 41, 42 Darlington transistors are designed for highvoltage powerswitching in inductive circuits. They are particularly suited for operation in applicationsPOWER DARLINGTONsuch as:TRANSISTORS
mje5730r.pdf

Order this documentMOTOROLAby MJE5730/DSEMICONDUCTOR TECHNICAL DATAMJE5730MJE5731High Voltage PNP Silicon PowerMJE5731ATransistors. . . designed for line operated audio output amplifier, SWITCHMODE power supplydrivers and other switching applications.1.0 AMPEREPOWER TRANSISTORS 300 V to 400 V (Min) VCEO(sus)PNP SILICON 1.0 A Rated Collector Current300
mje5730g.pdf

MJE5730, MJE5731,MJE5731AHigh Voltage PNP SiliconPlastic Power TransistorsThese devices are designed for line operated audio output amplifier,SWITCHMODE power supply drivers and other switching http://onsemi.comapplications.1.0 AMPEREFeaturesPOWER TRANSISTORS 300 V to 400 V (Min) - VCEO(sus)PCP SILICON 1.0 A Rated Collector Current300-350-400 VOLTS Popular T
Otros transistores... MJE340G , MJE3439G , MJE344G , MJE371G , MJE4343G , MJE5730G , MJE5731AG , MJE5731G , 2SD669 , MJE5850G , MJE5851G , MJE5852G , MJE6040T , MJE6041T , MJE6042T , MJE6043T , MJE6045T .
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