MJF18004G Datasheet. Equivalente

 ..1. Size:247K  onsemi
 mjf18004g.pdf

 6.1. Size:340K  onsemi
 mje18004 mjf18004.pdf

MJE18004, MJF18004 Switch-mode NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE/MJF18004 have an applications specific state-of-the-art die designed for use in 220 V line-operated switch-mode Power www.onsemi.com supplies and electronic light ballasts. Features POWER TRANSISTOR Improved Efficiency Due to Low Base Drive Requirements 5.0 AMPERES Hi

 6.2. Size:215K  inchange semiconductor
 mjf18004.pdf

isc Silicon NPN Power Transistor MJF18004 DESCRIPTION Collector-Base Breakdown Voltage- V = 1000V(Min) (BR)CBO High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in 220V line-operated switchmode power supplies and electronic light ballasts ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMET

 7.1. Size:257K  onsemi
 mjf18008g.pdf

MJE18008G, MJF18008G SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE/MJF18008G have an applications specific state-of-the-art die designed for use in 220 V line-operated SWITCHMODE Power http //onsemi.com supplies and electronic light ballasts. Features POWER TRANSISTOR Improved Efficiency Due to Low Base Drive Requirements 8.0 AMPERES

 7.2. Size:139K  onsemi
 mje18008 mjf18008.pdf

MJE18008, MJF18008 Switch-mode NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE/MJF18008 have an applications specific state-of-the-art die designed for use in 220 V line-operated switch-mode Power www.onsemi.com supplies and electronic light ballasts. Features POWER TRANSISTOR Improved Efficiency Due to Low Base Drive Requirements 8.0 AMPERES Hi

 7.3. Size:85K  jmnic
 mjf18006.pdf

Product Specification www.jmnic.com Silicon NPN Power Transistors MJF18006 DESCRIPTION With TO-220F package High voltage ,high speed Improved efficiency due to low base drive requirements -High and flat DC current gain hFE -Fast switching APPLICATIONS Designed for use in 220V line-operated switchmode power supplies and electronic light ballasts. PINNING PI

 7.4. Size:215K  inchange semiconductor
 mjf18006.pdf

isc Silicon NPN Power Transistor MJF18006 DESCRIPTION Collector-Base Breakdown Voltage- V = 1000V(Min) (BR)CBO High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in 220V line-operated switchmode power supplies and electronic light ballasts ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMET

 7.5. Size:214K  inchange semiconductor
 mjf18008.pdf

isc Silicon NPN Power Transistor MJF18008 DESCRIPTION Collector-Base Breakdown Voltage- V = 1000V(Min) (BR)CBO High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in 220V line-operated switchmode power supplies and electronic light ballasts ABSOLUTE MAXIMUM RATINGS(T =25 ) a UNIT SYMBOL P

 7.6. Size:214K  inchange semiconductor
 mjf18002.pdf

isc Silicon NPN Power Transistor MJF18002 DESCRIPTION Collector-Base Breakdown Voltage- V = 1000V(Min) (BR)CBO High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in 220V line-operated switchmode power supplies and electronic light ballasts ABSOLUTE MAXIMUM RATINGS(T =25 ) a UNIT SYMBOL P